Datasheet IRLB8743PbF (Infineon) - 6
| Hersteller | Infineon |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 10 / 6 — Fig 12. Fig 13c. Fig 13a. Fig 14a. Fig 14b. Fig 13b |
| Revision | 01_01 |
| Dateiformat / Größe | PDF / 282 Kb |
| Dokumentensprache | Englisch |
Fig 12. Fig 13c. Fig 13a. Fig 14a. Fig 14b. Fig 13b
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Textversion des Dokuments
IRLB8743PbF ) 9 Ω 1400 ) m( J I ID = 40A D e m( c 8 y 1200 TOP 11A na g t r 18A si e s n 7 BOTTOM 32A e E 1000 R e n hc O 6 n e a 800 l cr a u v o A 5 S e - 600 sl o T t J = 125°C u - P n i 4 e a l 400 r g D n i , S ) T 3 J = 25°C , n 200 o S ( A S E DR 2 0 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 V Starting T GS, Gate -to -Source Voltage (V) J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13c.
Maximum Avalanche Energy vs. Drain Current 15V R V D DS L DRIVER V V GS DS D.U.T. RG +-VDD RG D.U.T + - VDD IAS A VGS 20V VGS t 0.01 Pulse Width ≤ 1 µs p Ω Duty Factor ≤ 0.1 %
Fig 13a.
Unclamped Inductive Test Circuit
Fig 14a.
Switching Time Test Circuit V(BR)DSS V tp DS 90% 10% VGS td(on) tr td(off) tf IAS
Fig 14b.
Switching Time Waveforms
Fig 13b.
Unclamped Inductive Waveforms 6 www.irf.com
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13c.
Maximum Avalanche Energy vs. Drain Current 15V R V D DS L DRIVER V V GS DS D.U.T. RG +-VDD RG D.U.T + - VDD IAS A VGS 20V VGS t 0.01 Pulse Width ≤ 1 µs p Ω Duty Factor ≤ 0.1 %
Fig 13a.
Unclamped Inductive Test Circuit
Fig 14a.
Switching Time Test Circuit V(BR)DSS V tp DS 90% 10% VGS td(on) tr td(off) tf IAS
Fig 14b.
Switching Time Waveforms
Fig 13b.
Unclamped Inductive Waveforms 6 www.irf.com