Datasheet MC74VHC04 (ON Semiconductor) - 2
| Hersteller | ON Semiconductor |
| Beschreibung | Hex Inverter |
| Seiten / Seite | 7 / 2 — MC74VHC04. MAXIMUM RATINGS. Symbol. Parameter. Value. Unit. RECOMMENDED … |
| Revision | 7 |
| Dateiformat / Größe | PDF / 245 Kb |
| Dokumentensprache | Englisch |
MC74VHC04. MAXIMUM RATINGS. Symbol. Parameter. Value. Unit. RECOMMENDED OPERATING CONDITIONS. Min. Max. DC ELECTRICAL CHARACTERISTICS
Modelllinie für dieses Datenblatt
Textversion des Dokuments
MC74VHC04 MAXIMUM RATINGS Symbol Parameter Value Unit
This device contains protection V circuitry to guard against damage CC DC Supply Voltage –0.5 to + 7.0 V due to high static voltages or electric Vin DC Input Voltage –0.5 to + 7.0 V fields. However, precautions must V be taken to avoid applications of any out DC Output Voltage –0.5 to VCC + 0.5 V voltage higher than maximum rated IIK Input Diode Current −20 mA voltages to this high−impedance cir- cuit. For proper operation, V I in and OK Output Diode Current ± 20 mA Vout should be constrained to the Iout DC Output Current, per Pin ± 25 mA range GND v (Vin or Vout) v VCC. Unused inputs must always be ICC DC Supply Current, VCC and GND Pins ± 50 mA tied to an appropriate logic voltage PD Power Dissipation in Still Air, SOIC Package† 500 mW level (e.g., either GND or VCC). TSSOP Package† 450 Unused outputs must be left open. Tstg Storage Temperature – 65 to + 150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. †Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit
VCC DC Supply Voltage 2.0 5.5 V Vin DC Input Voltage 0 5.5 V Vout DC Output Voltage 0 VCC V TA Operating Temperature −40 + 85 _C tr, tf Input Rise and Fall Time VCC = 3.3V ±0.3V 0 100 ns/V VCC = 5.0V ±0.5V 0 20
DC ELECTRICAL CHARACTERISTICS T V A = 25
°
C TA = −40 to 85
°
C CC Symbol Parameter Test Conditions V Min Typ Max Min Max Unit
VIH Minimum High−Level 2.0 1.50 1.50 V Input Voltage 3.0 to VCC x 0.7 VCC x 0.7 5.5 VIL Maximum Low−Level 2.0 0.50 0.50 V Input Voltage 3.0 to VCC x 0.3 VCC x 0.3 5.5 VOH Minimum High−Level Vin = VIH or VIL 2.0 1.9 2.0 1.9 V Output Voltage IOH = −50μA 3.0 2.9 3.0 2.9 4.5 4.4 4.5 4.4 Vin = VIH or VIL IOH = −4mA 3.0 2.58 2.48 IOH = −8mA 4.5 3.94 3.80 VOL Maximum Low−Level Vin = VIH or VIL 2.0 0.0 0.1 0.1 V Output Voltage IOL = 50μA 3.0 0.0 0.1 0.1 4.5 0.0 0.1 0.1 Vin = VIH or VIL IOL = 4mA 3.0 0.36 0.44 IOL = 8mA 4.5 0.36 0.44 Iin Maximum Input Vin = 5.5 or GND 0 to 5.5 ± 0.1 ± 0.1 μA Leakage Current ICC Maximum Quiescent Vin = VCC or GND 5.5 2.0 20.0 μA Supply Current
www.onsemi.com 2
This device contains protection V circuitry to guard against damage CC DC Supply Voltage –0.5 to + 7.0 V due to high static voltages or electric Vin DC Input Voltage –0.5 to + 7.0 V fields. However, precautions must V be taken to avoid applications of any out DC Output Voltage –0.5 to VCC + 0.5 V voltage higher than maximum rated IIK Input Diode Current −20 mA voltages to this high−impedance cir- cuit. For proper operation, V I in and OK Output Diode Current ± 20 mA Vout should be constrained to the Iout DC Output Current, per Pin ± 25 mA range GND v (Vin or Vout) v VCC. Unused inputs must always be ICC DC Supply Current, VCC and GND Pins ± 50 mA tied to an appropriate logic voltage PD Power Dissipation in Still Air, SOIC Package† 500 mW level (e.g., either GND or VCC). TSSOP Package† 450 Unused outputs must be left open. Tstg Storage Temperature – 65 to + 150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. †Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit
VCC DC Supply Voltage 2.0 5.5 V Vin DC Input Voltage 0 5.5 V Vout DC Output Voltage 0 VCC V TA Operating Temperature −40 + 85 _C tr, tf Input Rise and Fall Time VCC = 3.3V ±0.3V 0 100 ns/V VCC = 5.0V ±0.5V 0 20
DC ELECTRICAL CHARACTERISTICS T V A = 25
°
C TA = −40 to 85
°
C CC Symbol Parameter Test Conditions V Min Typ Max Min Max Unit
VIH Minimum High−Level 2.0 1.50 1.50 V Input Voltage 3.0 to VCC x 0.7 VCC x 0.7 5.5 VIL Maximum Low−Level 2.0 0.50 0.50 V Input Voltage 3.0 to VCC x 0.3 VCC x 0.3 5.5 VOH Minimum High−Level Vin = VIH or VIL 2.0 1.9 2.0 1.9 V Output Voltage IOH = −50μA 3.0 2.9 3.0 2.9 4.5 4.4 4.5 4.4 Vin = VIH or VIL IOH = −4mA 3.0 2.58 2.48 IOH = −8mA 4.5 3.94 3.80 VOL Maximum Low−Level Vin = VIH or VIL 2.0 0.0 0.1 0.1 V Output Voltage IOL = 50μA 3.0 0.0 0.1 0.1 4.5 0.0 0.1 0.1 Vin = VIH or VIL IOL = 4mA 3.0 0.36 0.44 IOL = 8mA 4.5 0.36 0.44 Iin Maximum Input Vin = 5.5 or GND 0 to 5.5 ± 0.1 ± 0.1 μA Leakage Current ICC Maximum Quiescent Vin = VCC or GND 5.5 2.0 20.0 μA Supply Current
www.onsemi.com 2