Datasheet BAV199 (Nexperia) - 3

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Nexperia BAV199 Low-leakage double diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from single diode loaded; in free air [1] - - 500 K/W junction to ambient Rth(j-sp) thermal resistance from - - 360 K/W junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Per diode
VF forward voltage IF = 1 mA; Tj = 25 °C - - 900 mV IF = 10 mA; Tj = 25 °C - - 1 V IF = 50 mA; Tj = 25 °C - - 1.1 V IF = 150 mA; Tj = 25 °C - - 1.25 V IR reverse current VR = 75 V; Tj = 25 °C - 0.003 5 nA VR = 75 V; Tj = 150 °C - 3 80 nA Cd diode capacitance VR = 0 V; f = 1 MHz; Tj = 25 °C - 2 - pF trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; - 0.8 3 µs RL = 100 Ω; Tamb = 25 °C VFRM peak forward recovery IF = 10 mA; tr = 20 ns; Tamb = 25 °C - - 1.75 V voltage 300 mlb756 mlb752 300 I I F F (mA) (mA) 200 200 (1) (2) (3) single diode loaded 100 100 double diode loaded 0 0 0 100 200 0 0.4 0.8 1.2 1.6 Tamb (°C) VF (V) Device mounted on an FR4 printed-circuit board. (1) Tamb = 150 °C; typical values
Fig. 1. Maximum permissible continuous forward
(2) Tamb = 25 °C; typical values
current as a function of ambient temperature.
(3) Tamb = 25 °C; maximum values
Fig. 2. Forward current as a function of forward voltage; per diode
BAV199 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. Al rights reserved
Product data sheet 1 September 2020 3 / 10
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents