Datasheet ADG1208, ADG1209 (Analog Devices) - 3

HerstellerAnalog Devices
BeschreibungLow Capacitance, 4-/8-Channel, ±15 V/+12 V iCMOS Multiplexers
Seiten / Seite21 / 3 — Data Sheet. ADG1208/ADG1209. SPECIFICATIONS DUAL SUPPLY. Table 1. −40ºC …
RevisionE
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DokumentenspracheEnglisch

Data Sheet. ADG1208/ADG1209. SPECIFICATIONS DUAL SUPPLY. Table 1. −40ºC to −40ºC to. Parameter. +25ºC. +85ºC. +125ºC. Unit

Data Sheet ADG1208/ADG1209 SPECIFICATIONS DUAL SUPPLY Table 1 −40ºC to −40ºC to Parameter +25ºC +85ºC +125ºC Unit

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Data Sheet ADG1208/ADG1209 SPECIFICATIONS DUAL SUPPLY
VDD = +15 V ± 10%, VSS = –15 V ± 10%, GND = 0 V, unless otherwise noted. Temperature range is as follows: Y version: –40°C to +125°C.
Table 1. −40ºC to −40ºC to Parameter +25ºC +85ºC +125ºC Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VSS to VDD V On Resistance, RON 120 Ω typ VS = ±10 V, IS = −1 mA, see Figure 31 200 240 270 Ω max VDD = +13.5 V, VSS = −13.5 V On-Resistance Match Between Channels, ∆RON 3.5 Ω typ VS = ±10 V, IS = −1 mA 6 10 12 Ω max On-Resistance Flatness, RFLAT (On) 20 Ω typ VS = −5 V/0 V/+5 V, IS = −1 mA 64 76 83 Ω max LEAKAGE CURRENTS Source Off Leakage, IS (Off) ±0.003 nA typ VD = ±10 V, VS = −10 V, see Figure 32 ±0.1 ±0.6 ±1 nA max Drain Off Leakage, ID (Off) ±0.003 nA typ VS = 1 V/10 V, VD = 10 V/1 V, see Figure 32 ADG1208 ±0.1 ±0.6 ±1 nA max ADG1209 ±0.1 ±0.6 ±1 nA max Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = ±10 V, see Figure 33 ADG1208 ±0.2 ±0.6 ±1 nA max ADG1209 ±0.2 ±0.6 ±1 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH ±0.005 µA max VIN = VINL or VINH ±0.1 µA max Digital Input Capacitance, CIN 2 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 80 ns typ RL = 300 Ω, CL = 35 pF 130 165 185 ns max VS = 10 V, see Figure 34 tON (EN) 75 ns typ RL = 300 Ω, CL = 35 pF 95 105 115 ns max VS = 10 V, see Figure 36 tOFF (EN) 83 ns typ RL = 300 Ω, CL = 35 pF 100 125 140 ns max VS = 10 V, see Figure 36 Break-Before-Make Time Delay, tBBM 25 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 10 V, see Figure 35 Charge Injection 0.4 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 37 Off Isolation −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 38 Channel to Channel Crosstalk −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 40 Total Harmonic Distortion Plus Noise 0.15 % typ RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz, see Figure 41 −3 dB Bandwidth 550 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 39 CS (Off) 1 pF typ f = 1 MHz, VS = 0 V 1.5 pF max f = 1 MHz, VS = 0 V CD (Off), ADG1208 6 pF typ f = 1 MHz, VS = 0 V 7 pF max f = 1 MHz, VS = 0 V CD (Off), ADG1209 3.5 pF typ f = 1 MHz, VS = 0 V 4.5 pF max f = 1 MHz, VS = 0 V Rev. E | Page 3 of 21 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAMS GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TERMINOLOGY TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE