link to page 14 link to page 14 link to page 14 link to page 14 link to page 15 link to page 15 link to page 15 link to page 15 link to page 15 link to page 14 link to page 14 link to page 14 link to page 13 link to page 13 link to page 16 Data SheetADG5298SPECIFICATIONS ±15 V DUAL-SUPPLY VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, and −55°C ≤ TA ≤ +210°C, unless otherwise noted. Table 1. ParameterSymbol1Test Conditions/Comments1Min Typ2Max Unit ANALOG SWITCH Analog Signal Range VSS VDD V On Resistance RON Supply voltage (VS) = ±10 V, drain source 290 400 Ω current (IDS) = −1 mA, see Figure 31; for maximum RON, VDD = +13.5 V, VSS = −13.5 V On-Resistance Match Between Channels ΔRON VS = ±10 V, IDS = −1 mA 2.0 10 Ω On-Resistance Flatness RFLAT (ON) VS = ±10 V, IDS = −1 mA 60 130 Ω LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage IS (off) VS = ±10 V, VD = 10 V, see Figure 32 −8 ±0.005 +8 nA Drain Off Leakage ID (off) VS = ±10 V, VD = 10 V, see Figure 32 −60 ±0.005 +60 nA Channel On Leakage ID (on), IS (on) VS = VD = ±10 V, see Figure 30 −70 ±0.01 +70 nA DIGITAL INPUTS Input High Voltage VINH 2.0 V Input Low Voltage VINL 0.8 V Input Current IINL or IINH Input voltage (VIN) = ground voltage (VGND) or VDD −0.1 +0.002 +0.1 µA Digital Input Capacitance CIN 3 pF DYNAMIC CHARACTERISTICS3 Transition Time tTRANSITION Load resistance (RL) = 300 Ω, load capacitance 150 335 ns (CL) = 35 pF, VS = 10 V, see Figure 36 On Time tON (EN) RL = 300 Ω, CL = 35 pF, VS = 10 V, see Figure 38 125 275 ns Off Time tOFF (EN) RL = 300 Ω, CL = 35 pF, VS = 10 V, see Figure 38 160 275 ns Break-Before-Make Time Delay tD RL = 300 Ω, CL = 35 pF, S1 voltage (VS1) = 25 55 ns S2 voltage (VS2) = 10 V, see Figure 37 Charge Injection QINJ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 39 0.2 pC Off Isolation RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 34 86 dB Channel to Channel Crosstalk RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 33 −80 dB −3 dB Bandwidth RL = 50 Ω, CL = 5 pF, see Figure 35 110 MHz Source Capacitance, Off CS (off) VS = 0 V, frequency (f) = 1 MHz 2.9 pF Drain Capacitance, Off CD (off) VS = 0 V, f = 1 MHz 34 pF Source/Drain Capacitance, On CD (on), CS VS = 0 V, f = 1 MHz 37 pF (on) POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V Supply Current Positive IDD Digital inputs = 0 V or 5 V, see Figure 28 60 80 µA Negative ISS Digital inputs = 0 V or 5 V, see Figure 29 10 20 µA Ground Current IGND Digital inputs = 0 V or 5 V 60 80 µA Supply Range VDD/VSS GND = 0 V ±9 ±22 V 1 See the Terminology section. 2 TA = 25°C, except for the analog switch and power requirements values, where TA = 210°C. 3 Guaranteed by design, not subject to production test. Rev. 0 | Page 3 of 20 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ±15 V DUAL-SUPPLY ±20 V DUAL SUPPLY 12 V SINGLE SUPPLY 36 V SINGLE SUPPLY CONTINUOUS CURRENT PER CHANNEL (Sx OR D) ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY THEORY OF OPERATION TRENCH ISOLATION APPLICATIONS INFORMATION OUTLINE DIMENSIONS ORDERING GUIDE