Datasheet CMPZ5235B - CMPZ5261B (Central Semiconductor)
| Hersteller | Central Semiconductor |
| Beschreibung | 0.5 Watt Zener Diode Chip |
| Seiten / Seite | 10 / 1 — PROCESS. 0.5 Watt Zener Diode Chip. PROCESS DETAILS. GEOMETRY. GROSS DIE … |
| Dateiformat / Größe | PDF / 744 Kb |
| Dokumentensprache | Englisch |
PROCESS. 0.5 Watt Zener Diode Chip. PROCESS DETAILS. GEOMETRY. GROSS DIE PER 4 INCH WAFER. PRINCIPAL DEVICE TYPES
Modelllinie für dieses Datenblatt
Textversion des Dokuments
PROCESS
CPZ19 Zener Diode
0.5 Watt Zener Diode Chip PROCESS DETAILS
Process EPITAXIAL PLANAR Die Size 17.7 x 17.7 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 x 11 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER
36,642
PRINCIPAL DEVICE TYPES
CMPZ5235B THRU CMPZ5261B BACKSIDE CATHODE R0 R6 (22-February 2012)
w w w. c e n t r a l s e m i . c o m
CPZ19 Zener Diode
0.5 Watt Zener Diode Chip PROCESS DETAILS
Process EPITAXIAL PLANAR Die Size 17.7 x 17.7 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 x 11 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER
36,642
PRINCIPAL DEVICE TYPES
CMPZ5235B THRU CMPZ5261B BACKSIDE CATHODE R0 R6 (22-February 2012)
w w w. c e n t r a l s e m i . c o m