Datasheet FDV303N (ON Semiconductor) - 5

FDV303N TYPICAL CHARACTERISTICS
TJ = 25°C Unless Otherwise Noted (continued) 5 150 I = 0.5 V = 5 V DS D A 100 10 V 4 15 V TAGE (V) 50 Ciss 3 ANCE (pF) Coss 2 20 ACIT −SOURCE VOL TE CAP f = 1 MHz 1 10 V = GS 0 V Crss GSV , GA 0 5 0 0.4 0.8 1.2 1.6 2 0.1 0.5 1 2 5 10 25 Q , g GATE CHARGE (nC) V , DS DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
5 5 3 SINGLE PULSE 4 1 R = 357 θJA ° C/W (A) T = 2 A 5°C 3 0.3 0.1 2 POWER (W) V = 4.5 V GS SINGLE PULSE I , DRAIN CURRENT D 0.03 R = 357 θJA °C/W 1 T = 25 A °C 0.01 0 0.1 0.2 0.5 1 2 5 10 20 40 0.001 0.01 0.1 1 10 100 300 V , D DS RAI N−SOURCE VOLTAGE (V) SINGLE PULSE TIME (s)
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation
1 0.5 D = 0.5 0.2 ANCE 0.2 R (t)= r(t) * R θJA θJA 0.1 0.1 R = 357 θJA °C/W RESIST 0.05 0.05 0.02 0.02 P(pk) THERMAL 0.01 0.01 t1 t2 0.005 Single Pulse T J − T = A P * R (t) θJA r(t), NORMALIZED EFFECTIVE 0.002 TRANSIENT Duty Cycle, D = t /t 1 2 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t , 1 TIME (sec)
Figure 11. Transient Thermal Response Curve www.onsemi.com 5