Datasheet FDV303N (ON Semiconductor) - 3

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FDV303N ELECTRICAL CHARACTERISTICS
TJ = 25°C unless otherwise noted
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS
BVDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = 250 mA 25 V ΔBVDSS/ Breakdown Voltage Temp. Coefficient ID = 250 mA, Referenced to 25°C 26 mV/°C ΔTJ IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1 mA TJ = 55°C 10 mA IGSS Gate − Body Leakage Current VGS = 8 V, VDS= 0 V 100 nA
ON CHARACTERISTICS
(Note 1) ΔVGS(th)/ Gate Threshold Voltage Temperature ID = 250 mA, Referenced to 25°C −2.6 mV/°C ΔTJ Coefficient VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA 0.65 0.8 1 V RDS(ON) Static Drain−Source On−Resistance VGS = 4.5 V, ID = 0.5 A 0.33 0.45 Ω T
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=125°C 0.52 0.8 VGS = 2.7 V, ID = 0.2 A 0.44 0.6 ID(ON) On−State Drain Current VGS = 2.7 V, VDS = 5 V 0.5 A gFS Forward Transconductance VDS = 5 V, ID= 0.5 A 1.45 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz 50 pF Coss Output Capacitance 28 pF Crss Reverse Transfer Capacitance 9 pF
SWITCHING CHARACTERISTICS
(Note 1) tD(on) Turn − On Delay Time VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω 3 6 ns tr Turn − On Rise Time 8.5 18 ns tD(off) Turn − Off Delay Time 17 30 ns tf Turn − Off Fall Time 13 25 ns Qg Total Gate Charge VDS = 5 V, ID = 0.5 A, VGS = 4.5 V 1.64 2.3 nC Qgs Gate−Source Charge 0.38 nC Qgd Gate−Drain Charge 0.45 nC
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain−Source Diode Forward Current 0.3 A VSD Drain−Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A (Note 1) 0.83 1.2 V 1. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
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