Datasheet N-Channel 60-V (D-S) MOSFET (Vishay) - 4

Si2337DS
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TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 20 0.6 ) ( I D = 1.2 A e 10 c n 0.5 at TJ = 150 °C ) si A s ( e t R n - T e n A = 125 °C rr 0.4 O u e C cr e TJ = 25 °C c u r o u 1 S o - 0.3 S o t - - ni I S ar D TA = 25 °C - 0.2 ) n o( S DR 0.1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 3 4 5 6 7 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
3.6 16 3.4 14 3.2 ID = 250 µA 12 3.0 ) 10 V( W ( ) h r t 2.8 ( e 8 S w G o V P 2.6 6 2.4 4 2.2 2 2.0 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
1000 100 ) Limited by R * DS(on) (A I Limited 10 DM rrent I Limited u D(on) 1 ms 1 C n 10 ms rai D - 100 ms 0.1 I D 1 s 10 s 0.01 DC TA = 25 °C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 1000 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on)
Safe Operating Area, Junction-to-Ambient
S19-0386-Rev. F, 20-May-2019
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