Datasheet N-Channel 60-V (D-S) MOSFET (Vishay) - 3
| Hersteller | Vishay |
| Beschreibung | P-Channel 80 V (D-S) MOSFET |
| Seiten / Seite | 10 / 3 — Si2337DS. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| Dateiformat / Größe | PDF / 226 Kb |
| Dokumentensprache | Englisch |
Si2337DS. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics
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Textversion des Dokuments
Si2337DS
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 7 7 VGS = 10 thru 6 V 6 6 ) 5 ) A V 5 ( GS = 5 V A ( t t n n er e r 4 rr 4 u u C C ni ni ar 3 ar 3 D D - - TA = - 55 °C I D D 2 I 2 TA = 25 °C TA = 125 °C 1 V 1 GS = 4 V 0 0 0 1 2 3 4 0.0 1.0 2.0 3.0 4.0 5.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.30 700 600 ) ( 0.25 V C GS = 6 V iss e ) 500 c F n p a ( t s e i c s 400 n e at R 0.20 i - c n V a GS = 10 V O p 300 - a ) C n o - ( S C 200 D 0.15 R 100 Coss Crss 0.10 0 0 1 2 3 4 5 6 7 0 10 20 30 40 50 60 70 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage Capacitance
10 2.0 ) I d 1.8 D = 1.2 A ) I e D = 1.2 A V z V ( GS = 10 V 8 il e a g V 1.6 a DS = 40 V m t r l o o N V ( 1.4 VGS = 6 V e 6 e cr c u n o at S s 1.2 - VDS = 64 V i o s t e - 4 e R t - 1.0 a n G O - - ) S n 0.8 G o 2 ( V S DR 0.6 0 0.4 0 2 4 6 8 10 12 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
S19-0386-Rev. F, 20-May-2019
3
Document Number: 73533 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 7 7 VGS = 10 thru 6 V 6 6 ) 5 ) A V 5 ( GS = 5 V A ( t t n n er e r 4 rr 4 u u C C ni ni ar 3 ar 3 D D - - TA = - 55 °C I D D 2 I 2 TA = 25 °C TA = 125 °C 1 V 1 GS = 4 V 0 0 0 1 2 3 4 0.0 1.0 2.0 3.0 4.0 5.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.30 700 600 ) ( 0.25 V C GS = 6 V iss e ) 500 c F n p a ( t s e i c s 400 n e at R 0.20 i - c n V a GS = 10 V O p 300 - a ) C n o - ( S C 200 D 0.15 R 100 Coss Crss 0.10 0 0 1 2 3 4 5 6 7 0 10 20 30 40 50 60 70 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage Capacitance
10 2.0 ) I d 1.8 D = 1.2 A ) I e D = 1.2 A V z V ( GS = 10 V 8 il e a g V 1.6 a DS = 40 V m t r l o o N V ( 1.4 VGS = 6 V e 6 e cr c u n o at S s 1.2 - VDS = 64 V i o s t e - 4 e R t - 1.0 a n G O - - ) S n 0.8 G o 2 ( V S DR 0.6 0 0.4 0 2 4 6 8 10 12 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
S19-0386-Rev. F, 20-May-2019
3
Document Number: 73533 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000