Datasheet BF909, BF909R (NXP) - 6

NXP Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R MLB940 MLB941 60 25 handbook, halfpage handbook, halfpage I D V = 4 V y fs G2 S (mA) (mS) 20 3.5 V 3 V 40 15 2.5 V 10 20 5 2 V 0 0 0 10 20 30 0 20 40 60 I (mA) D I (µA) G1 VDS = 5 V. VDS = 5 V; VG2-S = 4 V. Tj = 25 °C. Tj = 25 °C. Fig.8 Forward transfer admittance as a Fig.9 Drain current as a function of gate 1 current; function of drain current; typical values. typical values. MLB942 MLB943 16 30 handbook, halfpage handbook, halfpage I D R = 47 kΩ (mA) I D G1 68 kΩ 82 kΩ (mA) 12 100 kΩ 20 120 kΩ 150 kΩ 8 180 kΩ 220 kΩ 10 4 0 0 0 2 4 6 0 2 4 6 8 V (V) GG V = V (V) GG DS VDS = 5 V; VG2-S = 4 V. VG2-S = 4 V. RG1 = 120 kΩ (connected to VGG); Tj = 25 °C. RG1 connected to VGG; Tj = 25 °C. Fig.10 Drain current as a function of gate 1 Fig.11 Drain current as a function of gate 1 supply voltage (= VGG); typical values; (= VGG) and drain supply voltage; see Fig.18. typical values; see Fig.18. Rev. 02 - 19 November 2007 6 of 12 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINES Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history