Datasheet BF909, BF909R (NXP) - 5

NXP Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R MLB937 MLB936 110 30 handbook, halfpage handbook, halfpage V = 4 V 3 V 2.5 V G2 S Vunw I D (dBµV) (mA) 2 V 100 20 1.5 V 90 10 1 V 80 0 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2.0 gain reduction (dB) V (V) G1 S VDS = 5 V; VGG = 5 V; fw = 50 MHz. funw = 60 MHz; Tamb = 25 °C; RG1 = 120 kΩ. VDS = 5 V. Fig.4 Unwanted voltage for 1% cross-modulation Tj = 25 °C. as a function of gain reduction; typical values; see Fig.18. Fig.5 Transfer characteristics; typical values. MLB938 MLB939 30 200 handbook, halfpage handbook, halfpage V = 1.4 V G1 S I G1 V = 4 V G2 S I D (µA) (mA) 1.3 V 150 3.5 V 20 1.2 V 3 V 1.1 V 100 2.5 V 1.0 V 10 0.9 V 50 2 V 0 0 0 2 4 6 8 10 0 1 2 3 V (V) V (V) G1 S DS VDS = 5 V. VDS = 5 V. VG2-S = 4 V. Tj = 25 °C. Tj = 25 °C. Fig.7 Gate 1 current as a function of gate 1 Fig.6 Output characteristics; typical values. voltage; typical values. Rev. 02 - 19 November 2007 5 of 12 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINES Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history