Datasheet 1N4740A - 1M200Z (Taiwan Semiconductor) - 6

HerstellerTaiwan Semiconductor
Beschreibung1W, 10V - 200V Zener Diode
Seiten / Seite8 / 6 — 1N4740A – 1M200Z. CHARACTERISTICS CURVES. Fig.9 Effect Of Zener Current. …
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1N4740A – 1M200Z. CHARACTERISTICS CURVES. Fig.9 Effect Of Zener Current. Fig.10 Typical Thermal Resistance versus Lead Length

1N4740A – 1M200Z CHARACTERISTICS CURVES Fig.9 Effect Of Zener Current Fig.10 Typical Thermal Resistance versus Lead Length

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1N4740A – 1M200Z
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.9 Effect Of Zener Current Fig.10 Typical Thermal Resistance versus Lead Length
175 6 ) Vz@ I ZT /℃ 150 V L m( 4 0.01mA T MA N R E 125 I E 1 mA C TH ) FFI 2 D A W/ 100 OE E C L o C ( 20mA E E O T C R N 75 0 A TU ONI T A T SI R C S E N E P U R 50 M J E , T -2 L ,z NOTE:BELOW 3 VOLTAGE ABOVE a ΘJ 25 V VOLTS CHANGES IN ZENER CURRENT θ NOT AFFECT TEMPERATURE COEFFICIENTS -4 0 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Vz, ZENER VOLTAGE(V) L, LEAD LENGTH TO HEAT SINK(INCHES)
Fig.11 Maximum Surge Power
100 RECTANGULAR TS C) WAVEFORM T 11V-91V oN 5% DUTY /ON-REPETITIVE PRIOR TO INITIAL PULSE A V W m ( R T E N 0.8V-10V NON-REPETITIVE EI OW C P 10 10% DUTY FFI GE R OE U C S E K R 20% DUTY A E TU P A , R PK E P P 1 M E 0 0 1 T , 10 100 1000 z Vz, NOMINAL ZENER VOLTAGE(V) V PW, PULSE W θID TH (ms) 6 Version: O2104