Datasheet 1N4740A - 1M200Z (Taiwan Semiconductor) - 5

1N4740A – 1M200Z
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Typical Leakage Current Fig.6 Typical Capacitance versus Vz
10000 1000 TYPICAL LEAKAGE CURRENT 1000 AT 80% OF NOMINAL BREAKDOWN VOLTAGE ) A μ 100 ( T N E 10 F) p( R R E 0V BIAS U C 100 C 1 N 1.0V BIAS E 125°C TAI G C A A K A 0.1 P E A L C , R C I 0.01 25°C 50% OF BREAKDOWN BIAS 0.001 10 3 4 5 6 7 8 9 10 11 12 13 14 15 1 10 100 Vz, FORWARD VOLTAGE (V) Vz, NOMINAL ZENER VOLTAGE (V)
Fig.7 Temperature Coefficients Fig.8 Temperature Coefficients
12 100 C) o b-RANGE FOR UNITS 12 TO 100 VOLTS / C) V 10 o / m V ( m T ( N 8 T EI N a-RANGE FOR UNITS TO 12 VOLTS C EI 6 C FFI FFI OE C 4 OE 10 E C R E 2 R RANGE Vz@ IZT TU A TU R A E 0 RANGE Vz@ IZT R P E M P E M T -2 E , T z , V z θ -4 Vθ 1 2 3 4 5 6 7 8 9 10 11 12 10 100 Vz, ZENER VOLTAGE(V) Vz, ZENER VOLTAGE(V) 5 Version: O2104