Datasheet KSD1616-Y/G/L, KSD1616A-Y/G (MCC)
| Hersteller | MCC |
| Beschreibung | NPN Silicon Epitaxial Transistors |
| Seiten / Seite | 4 / 1 — KSD1616-Y/G/L&KSD1616A-Y/G. Features. NPN Silicon. Epitaxial. … |
| Dateiformat / Größe | PDF / 450 Kb |
| Dokumentensprache | Englisch |
KSD1616-Y/G/L&KSD1616A-Y/G. Features. NPN Silicon. Epitaxial. Transistors. Maximum Ratings @ 25°C Unless Otherwise Specified
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KSD1616-Y/G/L&KSD1616A-Y/G Features
• Audio Frequency Power Amplifier & Medium Speed Switching • Halogen Free Available Upon Request By Adding Suffix "-HF" • Moisture Sensitivity Level 1
NPN Silicon
• Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Epitaxial
Compliant. See Ordering Information)
Transistors Maximum Ratings @ 25°C Unless Otherwise Specified
• Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 166.7℃/W Junction to Ambient
Parameter Symbol Rating Unit
KSD1616 50 Collector-Base Voltage VCBO V KSD1616A 60 TO-92 Collector-Emitter KSD1616 60 VCEO V Voltage KSD1616A 120 Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 1 A A E Peak Collector Current ICM 2 A Collector Power Dissipation PC 0.75 W B 1 2 3 G C
Marking:
D1616 X D
Internal Structure
C DIMENSIONS B INCHES MM 1.EMITTER DIM NOTE MIN MAX MIN MAX 2.COLLECTOR A 0.169 0.185 4.30 4.70 E 3.BASE B 0.169 0.185 4.30 4.70 C 0.500 ----- 12.70 ----- D 0.015 0.022 0.38 0.55 E 0.130 0.146 3.30 3.70 0.095 0.105 2.42 2.67 Straight Lead G 0.173 0.220 4.40 5.60 Bent Rev.3-2-12012020 1/4 MCCSEMI.COM Document Outline 空白页面
• Audio Frequency Power Amplifier & Medium Speed Switching • Halogen Free Available Upon Request By Adding Suffix "-HF" • Moisture Sensitivity Level 1
NPN Silicon
• Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Epitaxial
Compliant. See Ordering Information)
Transistors Maximum Ratings @ 25°C Unless Otherwise Specified
• Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 166.7℃/W Junction to Ambient
Parameter Symbol Rating Unit
KSD1616 50 Collector-Base Voltage VCBO V KSD1616A 60 TO-92 Collector-Emitter KSD1616 60 VCEO V Voltage KSD1616A 120 Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 1 A A E Peak Collector Current ICM 2 A Collector Power Dissipation PC 0.75 W B 1 2 3 G C
Marking:
D1616 X D
Internal Structure
C DIMENSIONS B INCHES MM 1.EMITTER DIM NOTE MIN MAX MIN MAX 2.COLLECTOR A 0.169 0.185 4.30 4.70 E 3.BASE B 0.169 0.185 4.30 4.70 C 0.500 ----- 12.70 ----- D 0.015 0.022 0.38 0.55 E 0.130 0.146 3.30 3.70 0.095 0.105 2.42 2.67 Straight Lead G 0.173 0.220 4.40 5.60 Bent Rev.3-2-12012020 1/4 MCCSEMI.COM Document Outline 空白页面