Datasheet KSD1616-Y/G/L, KSD1616A-Y/G (MCC) - 3

HerstellerMCC
BeschreibungNPN Silicon Epitaxial Transistors
Seiten / Seite4 / 3 — KSD1616-Y/G/L&KSD1616A-Y/G. Curve Characteristics
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KSD1616-Y/G/L&KSD1616A-Y/G. Curve Characteristics

KSD1616-Y/G/L&KSD1616A-Y/G Curve Characteristics

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KSD1616-Y/G/L&KSD1616A-Y/G Curve Characteristics
Fig. 1 - Static Characteristics Fig. 2 - DC Current Gain Characteristics 0.5 1000 Common Emitter TA=25°C TA=100°C 0.4 1.0mA (A) 0.9mA TA=25°C 0.3 0.8mA Gain Current 0.7mA 100 0.2 0.6mA Current 0.5mA DC Collector 0.4mA 0.1 0.3mA Common Emitter 0.2mA VCE= 2V I 0.0 B=0.1mA 10 0 2 4 6 8 10 1 10 100 1000 Collector-Emitter Voltage (V) Collector Current (mA) Fig. 3 - Base-Emitter Saturation Voltage Characteristics Fig. 4 - Collector-Emitter Saturation Voltage Characteristics 1000 200 (mV) (mV) 800 150 T Voltage Voltage A=25°C 600 TA=100°C 100 Saturation Saturation 400 TA=100°C TA=25°C 50 200 Base-Emitter Collector-Emitter β=20 β=20 0 0 0.1 1 10 100 1000 100 200 400 600 800 1000 Collector Current (mA) Collector Current (mA) Fig. 5 - Base-Emitter Voltage Characteristics Fig. 6 - Collector Power Derating Curve 1000 800 100 (mW) 600 (mA) TA=100°C 10 Current Dissipation 400 Power TA=25°C Collcetor 1 200 Collector Common Emitter VCE=2V 0.1 0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150 Base-Emitter Voltage (V) Ambient Temperature (°C) Rev.3-2-12012020 3/4 MCCSEMI.COM Document Outline 空白页面