Datasheet STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z (STMicroelectronics) - 5

link to page 9 link to page 9 link to page 9
STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time V 22 ns DD = 450 V, ID = 4 A, - - tr Rise Time R 13 ns G = 4.7 Ω, VGS = 10 V Figure 19 td(off) Turn-off delay time 55 ns Figure 24 - - tf Fall time 28 ns
Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit
ISD Source-drain current 8 A - I (1) SDM Source-drain current (pulsed) 32 A V (2) SD Forward on voltage ISD = 8 A, VGS=0 - 1.6 V I t SD = 8 A, rr Reverse recovery time 950 ns di/dt = 100 A/µs, Qrr Reverse recovery charge - 10 µC V I DD = 50 V, Tj = 150 °C RRM Reverse recovery current 21 A Figure 21 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Table 9. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit
BVGSO Gate-source breakdown voltage IGS = ±1 mA(open drain) 30 - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 9479 Rev 7 5/17 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data Table 4. Avalanche characteristics 2 Electrical characteristics Table 5. On/off states Table 6. Dynamic Table 7. Switching times Table 8. Source drain diode Table 9. Gate-source Zener diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D·PAK Figure 3. Thermal impedance for TO-220, D·PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 3 Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped Inductive load test circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 4 Package mechanical data Table 10. TO-220FP mechanical data Figure 25. TO-220FP drawing 5 Packaging mechanical data 6 Revision history Table 11. Revision history