Datasheet STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z (STMicroelectronics)
| Hersteller | STMicroelectronics |
| Beschreibung | N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH Power MOSFET |
| Seiten / Seite | 17 / 1 — STB9NK90Z, STF9NK90Z. STP9NK90Z, STW9NK90Z. Features. Type. DS(on). DSS. … |
| Dateiformat / Größe | PDF / 1.0 Mb |
| Dokumentensprache | Englisch |
STB9NK90Z, STF9NK90Z. STP9NK90Z, STW9NK90Z. Features. Type. DS(on). DSS. max. TO-220. D²PAK. TO-247. TO-220FP. Application. Figure 1
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STB9NK90Z, STF9NK90Z STP9NK90Z, STW9NK90Z
N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH™ Power MOSFET
Features R Type V DS(on) DSS I max. D Pw
3 STB9NK90Z 160 W 3 1 2 1 STW9NK90Z 160 W
TO-220 D²PAK
900V <1.3Ω 8A STP9NK90Z 160 W STF9NK90Z 40 W ■ Extremely high dv/dt capability 3 3 ■ 100% avalanche tested 2 2 1 1
TO-247 TO-220FP
■ Gate charge minimized
Application
■
Figure 1. Internal schematic diagram
Switching applications D(2)
Description
The SuperMESH™ series is obtained through an optimization of STMicroelectronics’ well- established strip-based PowerMESH™ layout. In G(1) addition to pushing on-resistance significantly lower, it also ensures very good dv/dt capability for the most demanding applications. This series complement STs’ full range of high voltage power MOSFETs. S(3) AM01476v1
Table 1. Device summary Order codes Marking Package Packaging
STB9NK90Z B9NK90 D²PAK Tape and reel STF9NK90Z F9NK90Z TO-220FP STP9NK90Z P9NK90Z TO-220 Tube STW9NK90Z W9NK90Z TO-247 May 2010 Doc ID 9479 Rev 7 1/17 www.st.com 17 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data Table 4. Avalanche characteristics 2 Electrical characteristics Table 5. On/off states Table 6. Dynamic Table 7. Switching times Table 8. Source drain diode Table 9. Gate-source Zener diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D·PAK Figure 3. Thermal impedance for TO-220, D·PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 3 Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped Inductive load test circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 4 Package mechanical data Table 10. TO-220FP mechanical data Figure 25. TO-220FP drawing 5 Packaging mechanical data 6 Revision history Table 11. Revision history
N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH™ Power MOSFET
Features R Type V DS(on) DSS I max. D Pw
3 STB9NK90Z 160 W 3 1 2 1 STW9NK90Z 160 W
TO-220 D²PAK
900V <1.3Ω 8A STP9NK90Z 160 W STF9NK90Z 40 W ■ Extremely high dv/dt capability 3 3 ■ 100% avalanche tested 2 2 1 1
TO-247 TO-220FP
■ Gate charge minimized
Application
■
Figure 1. Internal schematic diagram
Switching applications D(2)
Description
The SuperMESH™ series is obtained through an optimization of STMicroelectronics’ well- established strip-based PowerMESH™ layout. In G(1) addition to pushing on-resistance significantly lower, it also ensures very good dv/dt capability for the most demanding applications. This series complement STs’ full range of high voltage power MOSFETs. S(3) AM01476v1
Table 1. Device summary Order codes Marking Package Packaging
STB9NK90Z B9NK90 D²PAK Tape and reel STF9NK90Z F9NK90Z TO-220FP STP9NK90Z P9NK90Z TO-220 Tube STW9NK90Z W9NK90Z TO-247 May 2010 Doc ID 9479 Rev 7 1/17 www.st.com 17 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data Table 4. Avalanche characteristics 2 Electrical characteristics Table 5. On/off states Table 6. Dynamic Table 7. Switching times Table 8. Source drain diode Table 9. Gate-source Zener diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D·PAK Figure 3. Thermal impedance for TO-220, D·PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 3 Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped Inductive load test circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 4 Package mechanical data Table 10. TO-220FP mechanical data Figure 25. TO-220FP drawing 5 Packaging mechanical data 6 Revision history Table 11. Revision history