Datasheet BSS89 (Infineon) - 6
| Hersteller | Infineon |
| Beschreibung | SIPMOS Small-Signal-Transistor |
| Seiten / Seite | 8 / 6 — Rev. 2.2. BSP89. 9 Drain-source on-state resistance. 10 Typ. gate … |
| Revision | 02_02 |
| Dateiformat / Größe | PDF / 668 Kb |
| Dokumentensprache | Englisch |
Rev. 2.2. BSP89. 9 Drain-source on-state resistance. 10 Typ. gate threshold voltage. 11 Typ. capacitances
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Rev. 2.2 BSP89 9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 0.35 A, VGS = 10 V parameter: VGS = VDS; ID =108µA BSP89 30 2.2 W V 98% 1.8 24 22 1.6 20 DS(on) GS(th) typ. R 1.4 V 18 16 1.2 14 1 12 2% 0.8 10 8 98% 0.6 6 0.4 4 typ 0.2 2 0 0 -60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C 160 Tj Tj
11 Typ. capacitances 12 Forward character. of reverse diode
C = f (VDS) IF = f (VSD) parameter: VGS=0, f=1 MHz, Tj = 25 °C parameter: Tj 3 10 1 10 BSP89 pF A Ciss 2 10 0 10 I F C Coss 1 10 -1 10 Crss T = 25 °C typ j T = 150 °C typ j T = 25 °C (98%) j T = 150 °C (98%) j 0 10 -2 10 0 5 10 15 20 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2012-11-29
RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 0.35 A, VGS = 10 V parameter: VGS = VDS; ID =108µA BSP89 30 2.2 W V 98% 1.8 24 22 1.6 20 DS(on) GS(th) typ. R 1.4 V 18 16 1.2 14 1 12 2% 0.8 10 8 98% 0.6 6 0.4 4 typ 0.2 2 0 0 -60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C 160 Tj Tj
11 Typ. capacitances 12 Forward character. of reverse diode
C = f (VDS) IF = f (VSD) parameter: VGS=0, f=1 MHz, Tj = 25 °C parameter: Tj 3 10 1 10 BSP89 pF A Ciss 2 10 0 10 I F C Coss 1 10 -1 10 Crss T = 25 °C typ j T = 150 °C typ j T = 25 °C (98%) j T = 150 °C (98%) j 0 10 -2 10 0 5 10 15 20 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2012-11-29