Datasheet MASTERGAN4 (STMicroelectronics) - 6
| Hersteller | STMicroelectronics |
| Beschreibung | High power density 600V half-bridge driver with two enhancement mode GaN HEMT |
| Seiten / Seite | 27 / 6 — MASTERGAN4. Electrical characteristics. 4.1. Driver. Table 5. Driver … |
| Dateiformat / Größe | PDF / 480 Kb |
| Dokumentensprache | Englisch |
MASTERGAN4. Electrical characteristics. 4.1. Driver. Table 5. Driver electrical characteristics. Symbol. Parameter. Test condition
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MASTERGAN4 Electrical characteristics 4 Electrical characteristics 4.1 Driver Table 5. Driver electrical characteristics
VCC = PVCC = 6 V, SENSE = GND, TJ = 25 °C, unless otherwise specified Each voltage referred to GND unless otherwise specified
Symbol - Parameter Test condition Min Typ Max Unit Logic section supply
VCCthON VCC UV turn ON threshold(1) - 4.2 4.5 4.75 V VCCthOFF VCC UV turn OFF threshold(1) - 3.9 4.2 4.5 V VCChys VCC UV hysteresis(1) - 0.2 0.3 0.45 V I VCC undervoltage quiescent QVCCU VCC = PVCC = 3.8 V - 320 410 μA VCC vs. GND supply current SD/OD = LIN = 5 V; IQVCC VCC quiescent supply current HIN = 0 V; - 680 900 μA BOOT = 7 V SD/OD = 5 V; V I BO = 6.5 V; SVCC VCC switching supply current - 0.8 - mA VS = 0 V; FSW = 500 kHz
Low-side driver section supply
IQPVCC PVCC quiescent supply current SD/OD = LIN = 5 V - 150 - μA PVCC vs. PGND VS = 0 V ISPVCC PVCC switching supply current - 1.0 - mA FSW = 500 kHz RBLEED GL vs. PGND Low side gate bleeder PVCC = PGND 75 100 125 kΩ RONL - Low side turn on resistance(2) I(GL) = 1 mA (source) - 77 - Ω ROFFL - Low side turn off resistance(2) I(GL) = 1 mA (sink) - 2 - Ω
High-side floating section supply
VBOthON VBO UV turn ON threshold(3) - 3.6 4.0 4.4 V VBOthOFF VBO UV turn OFF threshold (3) - 3.4 3.7 4.0 V VBOhys VBO UV hysteresis(3) - 0.1 0.3 0.5 V BOOT vs. OUTb V I BO undervoltage quiescent QBOU V supply current(3) BO = 3.4 V - 140 200 μA V I BO = 6 V; LIN = GND; QBO VBO quiescent supply current(3) - 217 - μA SD/OD = HIN = 5 V; V I BO =6 V; SD/OD = 5 V; SBO BOOT BOOT switching supply current - 1.9 - mA VS = 0 V; FSW = 500 kHz ILK BOOT vs. SGND High voltage leakage current BOOT = OUT = 600 V - - 11 μA SD/OD = LIN = 5 V; RDBoot VCC vs. BOOT Bootstrap diode on-resistance(4) HIN = GND = PGND - 140 175 Ω VCC – BOOT = 0.5 V RONH - High side turn on resistance(2) I(GH) = 1 mA (source) - 77 - Ω ROFFH - High side turn off resistance(2) I(GH) = 1 mA (sink) - 2 - Ω
DS13686
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Rev 1 page 6/27
Document Outline Features Applications Description 1 Block diagram 2 Pin descriptions and connection diagram 2.1 Pin list 3 Electrical Data 3.1 Absolute maximum ratings 3.2 Recommended operating conditions 3.3 Thermal data 4 Electrical characteristics 4.1 Driver 4.2 GaN power transistor 5 Device characterization values 6 Functional description 6.1 Logic inputs 6.2 Bootstrap structure 6.3 VCC supply pins and UVLO function 6.4 VBO UVLO protection 6.5 Thermal shutdown 7 Typical application diagrams 8 Package information 8.1 QFN 9 x 9 x 1 mm, 31 leads, pitch 0.6 mm package information 9 Suggested footprint 10 Ordering information Revision history
MASTERGAN4 Electrical characteristics 4 Electrical characteristics 4.1 Driver Table 5. Driver electrical characteristics
VCC = PVCC = 6 V, SENSE = GND, TJ = 25 °C, unless otherwise specified Each voltage referred to GND unless otherwise specified
Symbol - Parameter Test condition Min Typ Max Unit Logic section supply
VCCthON VCC UV turn ON threshold(1) - 4.2 4.5 4.75 V VCCthOFF VCC UV turn OFF threshold(1) - 3.9 4.2 4.5 V VCChys VCC UV hysteresis(1) - 0.2 0.3 0.45 V I VCC undervoltage quiescent QVCCU VCC = PVCC = 3.8 V - 320 410 μA VCC vs. GND supply current SD/OD = LIN = 5 V; IQVCC VCC quiescent supply current HIN = 0 V; - 680 900 μA BOOT = 7 V SD/OD = 5 V; V I BO = 6.5 V; SVCC VCC switching supply current - 0.8 - mA VS = 0 V; FSW = 500 kHz
Low-side driver section supply
IQPVCC PVCC quiescent supply current SD/OD = LIN = 5 V - 150 - μA PVCC vs. PGND VS = 0 V ISPVCC PVCC switching supply current - 1.0 - mA FSW = 500 kHz RBLEED GL vs. PGND Low side gate bleeder PVCC = PGND 75 100 125 kΩ RONL - Low side turn on resistance(2) I(GL) = 1 mA (source) - 77 - Ω ROFFL - Low side turn off resistance(2) I(GL) = 1 mA (sink) - 2 - Ω
High-side floating section supply
VBOthON VBO UV turn ON threshold(3) - 3.6 4.0 4.4 V VBOthOFF VBO UV turn OFF threshold (3) - 3.4 3.7 4.0 V VBOhys VBO UV hysteresis(3) - 0.1 0.3 0.5 V BOOT vs. OUTb V I BO undervoltage quiescent QBOU V supply current(3) BO = 3.4 V - 140 200 μA V I BO = 6 V; LIN = GND; QBO VBO quiescent supply current(3) - 217 - μA SD/OD = HIN = 5 V; V I BO =6 V; SD/OD = 5 V; SBO BOOT BOOT switching supply current - 1.9 - mA VS = 0 V; FSW = 500 kHz ILK BOOT vs. SGND High voltage leakage current BOOT = OUT = 600 V - - 11 μA SD/OD = LIN = 5 V; RDBoot VCC vs. BOOT Bootstrap diode on-resistance(4) HIN = GND = PGND - 140 175 Ω VCC – BOOT = 0.5 V RONH - High side turn on resistance(2) I(GH) = 1 mA (source) - 77 - Ω ROFFH - High side turn off resistance(2) I(GH) = 1 mA (sink) - 2 - Ω
DS13686
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Rev 1 page 6/27
Document Outline Features Applications Description 1 Block diagram 2 Pin descriptions and connection diagram 2.1 Pin list 3 Electrical Data 3.1 Absolute maximum ratings 3.2 Recommended operating conditions 3.3 Thermal data 4 Electrical characteristics 4.1 Driver 4.2 GaN power transistor 5 Device characterization values 6 Functional description 6.1 Logic inputs 6.2 Bootstrap structure 6.3 VCC supply pins and UVLO function 6.4 VBO UVLO protection 6.5 Thermal shutdown 7 Typical application diagrams 8 Package information 8.1 QFN 9 x 9 x 1 mm, 31 leads, pitch 0.6 mm package information 9 Suggested footprint 10 Ordering information Revision history