Datasheet HMC1114 (Analog Devices) - 4

HerstellerAnalog Devices
Beschreibung10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz
Seiten / Seite15 / 4 — HMC1114. Data Sheet. ABSOLUTE MAXIMUM RATINGS Table 4. Parameter. Rating. …
RevisionA
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DokumentenspracheEnglisch

HMC1114. Data Sheet. ABSOLUTE MAXIMUM RATINGS Table 4. Parameter. Rating. ESD CAUTION

HMC1114 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 4 Parameter Rating ESD CAUTION

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HMC1114 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 4.
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these Drain Bias Voltage (VDD1, VDD2) 35 V dc or any other conditions above those indicated in the operational Gate Bias Voltage (VGG1, VGG2) −8 V to 0 V dc section of this specification is not implied. Operation beyond RF Input Power (RFIN) 30 dBm the maximum operating conditions for extended periods may Maximum Forward Gate Current 4 mA affect product reliability. Continuous Power Dissipation, PDISS (TA = 85°C, 24 W Derate 227 mW/°C Above 120°C) Thermal Resistance, Junction to Back of Paddle 4.4°C/W
ESD CAUTION
Channel Temperature 225°C Maximum Peak Reflow Temperature (MSL3)1 260°C Storage Temperature Range −40°C to +125°C Operating Temperature Range −40°C to +85°C ESD Sensitivity (Human Body Model) Class 1A, passed 250 V 1 See the Ordering Guide section. Rev. A | Page 4 of 15 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS TOTAL SUPPLY CURRENT BY VDD ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCE During Power-Up During Power-Down TYPICAL APPLICATION CIRCUIT EVALUATION PRINTED CIRCUIT BOARD (PCB) BILL OF MATERIALS OUTLINE DIMENSIONS ORDERING GUIDE