Datasheet HMC7885 (Analog Devices) - 3

Data Sheet HMC7885 SPECIFICATIONS
VDD = VDD1 = VDD2 = 28 V dc, VGG = VG1 = VG2, TA = 25°C, unless otherwise noted. Adjust VGG between −5 V to 0 V to achieve a total IDD = 2200 mA typical (1100 mA per side).
Table 1. Parameter Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 2 6 GHz GAIN Small Signal Gain 21 dB Power Gain 17 dB Gain Flatness ±2 dB VOLTAGE STANDING WAVE RATIO (VSWR) Input 2:1 Output 2:1 RF OUTPUT Saturated Output Power (PSAT) 45 dBm 5 dB compression with continuous wave (CW) input Output Power for 1 dB Compression (P1dB) 39 dBm Output Third-Order Intercept (IP3) 53 dBm Linear Power Output 34 dBm POWER ADDED EFFICIENCY (PAE) 25 % At PSAT Rev. 0 | Page 3 of 11 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION EVALUATION BOARD ASSEMBLY BILL OF MATERIALS OUTLINE DIMENSIONS ORDERING GUIDE