Datasheet HMC-ALH445 (Analog Devices) - 4

HMC-ALH445
v03.0410
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz
1
Pad Descriptions
Pad Number Function Description Interface Schematic This pad is AC coupled 1 RFIN IP and matched to 50 Ohms. H Power Supply Voltage for the amplifi er. See 2, 4 Vdd assembly for required external components. E - C This pad is AC coupled 3 RFOUT and matched to 50 Ohms. IS Die bottom GND Die bottom must be connected to RF/DC ground. W NO O
Assembly Diagram
S - L R IE IF L P M A Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifi er. Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output. Note 3: Biasable from either side. Info F rmoatr pr ion f iurcne, de ished b ly iv A e n r al y o a g D n evd to p ices is bla eli c eve o ed t rde o be ras: H ccuratite tiatne M d reli iacr ble ow . Ho av wev e C er, n o o rpo Fora r t p iro ic n e ,, 2 d 0 eli A ve lrpha R y, and toad, C o place hoel rd m er s s fo : Ard, MA 01 nalog Devic 8 e 2 s 4 , Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rde hone r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .ehit r o t nilte in .c e ao t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
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Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r app tion Su s p @ po h rt itt : P ite ho .c ne o : 1m -800-ANALOG-D