Datasheet HMC-APH510 (Analog Devices) - 3

HMC-APH510
v03.0709
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz Absolute Maximum Ratings
Drain Bias Voltage +5.5 Vdc Gate Bias Voltage -1 to +0.3 Vdc ELECTROSTATIC SENSITIVE DEVICE RF Input Power 10 dBm OBSERVE HANDLING PRECAUTIONS 3 Thermal Resistance 42.2 °C/W (Channel to die bottom) Channel Temperature 180 °C Storage Temperature -65 °C to +150 °C IP Drain Bias Current (Idd1) 110 mA H Drain Bias Current (Idd2) 300 mA Drain Bias Current (Idd3) 300 mA S - C R IE
Outline Drawing
IF L P M R A E W O R & P A E IN L NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. Standard Alternate 3. BACKSIDE METALLIZATION: GOLD. GP-2 (Gel Pack) [2] 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. [1] Refer to the “Packaging Information” section for die 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. packaging dimensions. 7. OVERALL DIE SIZE ±.002” [2] For alternate packaging information contact Hittite Microwave Corporation. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
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