Datasheet HMC-APH510 (Analog Devices)
| Hersteller | Analog Devices |
| Beschreibung | GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 -40 GHz |
| Seiten / Seite | 6 / 1 — HMC-APH510. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 37 - 40 GHz. Typical … |
| Dateiformat / Größe | PDF / 298 Kb |
| Dokumentensprache | Englisch |
HMC-APH510. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 37 - 40 GHz. Typical Applications. Features. Functional Diagram
Modelllinie für dieses Datenblatt
Textversion des Dokuments
HMC-APH510
v03.0709
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz Typical Applications Features
This HMC-APH510 is ideal for: Output IP3: +35 dBm • Point-to-Point Radios P1dB: +26 dBm 3 • Point-to-Multi-Point Radios Gain: 20 dB • Military & Space Supply Voltage: +5V 50 Ohm Matched Input/Output IP Die Size: 3.76 x 0.92 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH510 is a high dynamic range, three IE stage GaAs HEMT MMIC Medium Power Amplifi er IF which operates between 37 and 40 GHz. The HMC- L APH510 provides 20 dB of gain, and an output power P of +26 dBm at 1 dB compression from a +5V supply M voltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated R A for reliable operation. The HMC-APH510 GaAs E HEMT MMIC Medium Power Amplifi er is compatible W with conventional die attach methods, as well as O thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with R & P RF probes. A E IN L
Electrical Specifi cations, T = +25° C, A Vdd1 = Vdd2 = Vdd3 = 5V, Idd1 + Idd2 + Idd3 = 640 mA
[2] Parameter Min. Typ. Max. Units Frequency Range 37 - 40 GHz Gain 18 20 dB Input Return Loss 16 dB Output Return Loss 7 dB Output power for 1dB Compression (P1dB) 25 26 dBm Output Third Order Intercept (IP3) 33 35 dBm Supply Current (Idd1+Idd2+Idd3) 640 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2=Vgg3 between -1V to +0.3V (typ. -0.5V) to achieve Idd = 640 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 196
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v03.0709
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz Typical Applications Features
This HMC-APH510 is ideal for: Output IP3: +35 dBm • Point-to-Point Radios P1dB: +26 dBm 3 • Point-to-Multi-Point Radios Gain: 20 dB • Military & Space Supply Voltage: +5V 50 Ohm Matched Input/Output IP Die Size: 3.76 x 0.92 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH510 is a high dynamic range, three IE stage GaAs HEMT MMIC Medium Power Amplifi er IF which operates between 37 and 40 GHz. The HMC- L APH510 provides 20 dB of gain, and an output power P of +26 dBm at 1 dB compression from a +5V supply M voltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated R A for reliable operation. The HMC-APH510 GaAs E HEMT MMIC Medium Power Amplifi er is compatible W with conventional die attach methods, as well as O thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with R & P RF probes. A E IN L
Electrical Specifi cations, T = +25° C, A Vdd1 = Vdd2 = Vdd3 = 5V, Idd1 + Idd2 + Idd3 = 640 mA
[2] Parameter Min. Typ. Max. Units Frequency Range 37 - 40 GHz Gain 18 20 dB Input Return Loss 16 dB Output Return Loss 7 dB Output power for 1dB Compression (P1dB) 25 26 dBm Output Third Order Intercept (IP3) 33 35 dBm Supply Current (Idd1+Idd2+Idd3) 640 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2=Vgg3 between -1V to +0.3V (typ. -0.5V) to achieve Idd = 640 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 196
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D