HMC633 v02.0517 GaAs PHEMT MMIC DRIVERAMPLIFIER, 5 - 17 GHzPower Compression @ 10 GHzPower Compression @ 17 GHz 2 33 33 30 30 (%) 27 (%) 27 24 PAE 24 Pout (dBm) PAE Gain (dB) IP 21 21 PAE (%) (dB), (dB), H 18 18 15 GAIN 15 GAIN 12 12 (dBm), 9 Pout (dBm) (dBm), 9 K - C 6 Gain (dB) PAE (%) 6 Pout Pout C 3 3 0 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 LO INPUT POWER (dBm) INPUT POWER (dBm) IN B A Output IP3 vs. Temperature @ Pin = -15 dBmNoise Figure vs. Temperature 36 20 32 16 +25 C +85 C R & G ) -55 C E (dB ) 28 E 12 R U IV (dBm IG +25 C F R IP3 24 +85 C E 8 -55 C IS O N 20 4 S - D 16 0 R 2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20 IE FREQUENCY (GHz) FREQUENCY (GHz) LIF P Gain & Power vs. Supply Voltage @ 10 GHzReverse Isolation vs. Temperature M 32 0 A (dBm) -20 28 Psat ) +25 C (dB -40 Bm), +85 C N (d -55 C 24 IO T LA P1dB -60 O IS Gain 20 P1dB (dB), Psat -80 GAIN 16 -100 4.5 4.7 4.9 5.1 5.3 5.5 2 4 6 8 10 12 14 16 18 20 Vdd (V) FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 2 - 3 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Broadband Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature P1dB vs. Temperature Psat vs. Temperature Power Compression @ 10 GHz Power Compression @ 17 GHz Output IP3 vs. Temperature @ Pin = -15 dBm Noise Figure vs. Temperature Gain & Power vs. Supply Voltage @ 10 GHz Reverse Isolation vs. Temperature Gain, Power & Output IP3 vs. Gate Voltage @ 10 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding