Datasheet HMC633 (Analog Devices) - 4

HMC633
v02.0517
GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 17 GHz Gain, Power & Output IP3 vs. Gate Voltage @ 10 GHz
35 240 210 2 30 180 150 Idd (mA) 25 120 IP H 90 20 60 Gain P1dB Psat 30 Idd OIP3 K - C 15 0 C GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) -0.8 -0.77 -0.75 -0.73 -0.7 -0.67 -0.65 Vgg (V) LO
Typical Supply Current vs. Vdd
IN B
Absolute Maximum Ratings
A Drain Bias Voltage Vdd (V) Idd (mA) +5.5 Vdc (Vdd1, Vdd2, Vdd3, Vdd4) 4.5 178 Gate Bias Voltage (Vgg) -3 to 0 Vdc 5.0 180 RF Input Power (RFIN)(Vdd = +5 Vdc) +5 dBm 5.5 183 R & G Channel Temperature 175 °C Note: Amplifier will operate over full voltage ranges shown above E Continuous Pdiss (T= 85 °C) 1.06 W (derate 11.76 mW/°C above 85 °C) IV Thermal Resistance R 85 °C/W (channel to die bottom) Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C S - D R IE ELECTROSTATIC SENSITIVE DEVICE LIF OBSERVE HANDLING PRECAUTIONS P M A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
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Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Broadband Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature P1dB vs. Temperature Psat vs. Temperature Power Compression @ 10 GHz Power Compression @ 17 GHz Output IP3 vs. Temperature @ Pin = -15 dBm Noise Figure vs. Temperature Gain & Power vs. Supply Voltage @ 10 GHz Reverse Isolation vs. Temperature Gain, Power & Output IP3 vs. Gate Voltage @ 10 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding