Datasheet BUK9V13-40H (Nexperia) - 5
| Hersteller | Nexperia |
| Beschreibung | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) |
| Seiten / Seite | 13 / 5 — Nexperia. BUK9V13-40H. Dual N-channel 40 V, 13 mOhm logic level MOSFET in … |
| Revision | 11022021 |
| Dateiformat / Größe | PDF / 313 Kb |
| Dokumentensprache | Englisch |
Nexperia. BUK9V13-40H. Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
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Nexperia BUK9V13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032343 10 Zt Z ht(j(-m - b) b (K/ K W) W δ δ = = 0 .5 . 1 0.02 0. 0 1 0. 0 05 0 tp 10-1 0. 0 02 0 sing n l g e e sh s ot o P δ = T t tp T 10-210-6 10-5 10-4 10-3 10-2 10-1 1 tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration, FET1 and FET2 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics FET1 and FET2
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 43 - V breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -40 °C - 40.5 - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 40 - V VGS(th) gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9; 1.5 1.85 2.2 V voltage Fig. 10 ID = 1 mA; VDS=VGS; Tj = 175 °C; 0.7 - - V Fig. 10 ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10 - - 2.6 V IDSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.01 5 µA VDS = 16 V; VGS = 0 V; Tj = 125 °C - 0.14 10 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - 26 500 µA IGSS gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA BUK9V13-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 5 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
Nexperia BUK9V13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032343 10 Zt Z ht(j(-m - b) b (K/ K W) W δ δ = = 0 .5 . 1 0.02 0. 0 1 0. 0 05 0 tp 10-1 0. 0 02 0 sing n l g e e sh s ot o P δ = T t tp T 10-210-6 10-5 10-4 10-3 10-2 10-1 1 tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration, FET1 and FET2 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics FET1 and FET2
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 43 - V breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -40 °C - 40.5 - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 40 - V VGS(th) gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9; 1.5 1.85 2.2 V voltage Fig. 10 ID = 1 mA; VDS=VGS; Tj = 175 °C; 0.7 - - V Fig. 10 ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10 - - 2.6 V IDSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.01 5 µA VDS = 16 V; VGS = 0 V; Tj = 125 °C - 0.14 10 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - 26 500 µA IGSS gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA BUK9V13-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 5 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents