Datasheet AD826 (Analog Devices) - 3

AD826 Parameter Conditions VS Min Typ Max Unit
OUTPUT CHARACTERISTICS Output Voltage Swing RLOAD = 500 Ω ±5 V 3.3 3.8 ±V RLOAD = 150 Ω ±5 V 3.2 3.6 ±V RLOAD = 1 kΩ ±15 V 13.3 13.7 ±V RLOAD = 500 Ω ±15 V 12.8 13.4 ±V RLOAD = 500 Ω 0, +5 V +1.5, +3.5 V Output Current ±15 V 50 mA ±5 V 50 mA 0, +5 V 30 mA Short-Circuit Current ±15 V 90 mA Output Resistance Open Loop 8 Ω MATCHING CHARACTERISTICS Dynamic Crosstalk f = 5 MHz ±15 V –80 dB Gain Flatness Match G = +1, f = 40 MHz ±15 V 0.2 dB Slew Rate Match G = –1 ±15 V 10 V/µs DC Input Offset Voltage Match TMIN–TMAX ±5 V to ±15 V 0.5 2 mV Input Bias Current Match T ± MIN –TMAX 5 V to ± 15 V 0.06 0.8 µA Open-Loop Gain Match VO = ± 10 V, RLOAD = 1 kΩ, T ± MIN –TMAX 15 V 0.15 0.01 mV/V Common-Mode Rejection Ratio Match VCM = ± 12 V, TMIN–TMAX ±15 V 80 100 dB Power Supply Rejection Ratio Match ±5 V to ±15 V, TMIN–TMAX 80 100 dB POWER SUPPLY Operating Range Dual Supply ±2.5 ±18 V Single Supply +5 +36 V Quiescent Current/Amplifier ±5 V 6.6 7.5 mA T ± MIN to TMAX 5 V 7.5 mA ±15 V 7.5 mA TMIN to TMAX ±15 V 6.8 7.5 mA Power Supply Rejection Ratio VS = ± 5 V to ± 15 V, TMIN to TMAX 75 86 dB NOTES 1Full power bandwidth = slew rate/2 π VPEAK.
ESD SUSCEPTIBILITY
Specifications subject to change without notice. ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 volts, which readily accumulate on the human
ABSOLUTE MAXIMUM RATINGS1
body and on test equipment, can discharge without detection. Supply Voltage . ± 18 V Although the AD826 features proprietary ESD protection cir- Internal Power Dissipation2 cuitry, permanent damage may still occur on these devices Plastic (N) . See Derating Curves if they are subjected to high energy electrostatic discharges. Small Outline (R) . See Derating Curves Therefore, proper ESD precautions are recommended to avoid Input Voltage (Common Mode) . ± VS any performance degradation or loss of functionality. Differential Input Voltage . ± 6 V Output Short Circuit Duration . See Derating Curves
2.0 T
Storage Temperature Range (N, R) . –65°C to +125°C
J = +150 C 8-LEAD MINI-DIP PACKAGE
Operating Temperature Range . –40°C to +85°C Lead Temperature Range (Soldering 10 seconds) . +300°C
Watts – 1.5
NOTES 1Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational
1.0
section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability . 2Specification is for device in free air: 8-lead plastic package, θJA = 100°C/watt; 8-lead SOIC package, θ
0.5
JA = 155°C/watt.
8-LEAD SOIC PACKAGE MAXIMUM POWER DISSIPATION 0 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 AMBIENT TEMPERATURE – C
Maximum Power Dissipation vs. Temperature for Different Package Types REV. C –3–