Datasheet NV6128 (Navitas Semiconductor) - 7
| Hersteller | Navitas Semiconductor |
| Beschreibung | GaNFast Power IC |
| Seiten / Seite | 25 / 7 — NV6128. 6.7. Characteristic Graphs. Final Datasheet. Rev Dec 16, 2020 |
| Dateiformat / Größe | PDF / 1.8 Mb |
| Dokumentensprache | Englisch |
NV6128. 6.7. Characteristic Graphs. Final Datasheet. Rev Dec 16, 2020
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Textversion des Dokuments
NV6128 8 6.7. Characteristic Graphs
(GaN FET, T = 25 ºC unless otherwise specified) C Fig. 3. Pulsed Drain current (I PULSE) vs. D Fig. 4. Pulsed Drain current (I PULSE) vs. D drain-to-source voltage (V ) at T = 25 °C DS drain-to-source voltage (V ) at T = 125 °C DS Fig. 5. Source-to-drain reverse conduction voltage Fig. 6. Drain-to-source leakage current (I ) vs. DSS drain-to-source voltage (V ) DS Fig. 7. V and V vs. junction Fig. 8. Normalized on-resistance (R ) vs. PWMH PWML DS(ON) temperature(T ) junction temperature (T ) J J
Final Datasheet 7 Rev Dec 16, 2020
(GaN FET, T = 25 ºC unless otherwise specified) C Fig. 3. Pulsed Drain current (I PULSE) vs. D Fig. 4. Pulsed Drain current (I PULSE) vs. D drain-to-source voltage (V ) at T = 25 °C DS drain-to-source voltage (V ) at T = 125 °C DS Fig. 5. Source-to-drain reverse conduction voltage Fig. 6. Drain-to-source leakage current (I ) vs. DSS drain-to-source voltage (V ) DS Fig. 7. V and V vs. junction Fig. 8. Normalized on-resistance (R ) vs. PWMH PWML DS(ON) temperature(T ) junction temperature (T ) J J
Final Datasheet 7 Rev Dec 16, 2020