Datasheet IRF7389PbF (Infineon) - 3

HerstellerInfineon
BeschreibungHEXFET Power MOSFET
Seiten / Seite10 / 3 — VGS. TOP 15V. 10V. 7.0V. 5.5V. 4.5V. 4.0V. 3.5V. BOTTOM 3.0V. Fig 1. Fig …
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DokumentenspracheEnglisch

VGS. TOP 15V. 10V. 7.0V. 5.5V. 4.5V. 4.0V. 3.5V. BOTTOM 3.0V. Fig 1. Fig 2. Fig 3. Fig 4

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V Fig 1 Fig 2 Fig 3 Fig 4

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Textversion des Dokuments

N-Channel IRF7389PbF 100
VGS
100
VGS TOP 15V TOP 15V 10V 10V 7.0V
)
7.0V 5.5V
)
5.5V 4.5V 4.5V 4.0V
nt (A
4.0V 3.5V 3.5V BOTTOM 3.0V
nt (A
BOTTOM 3.0V
urre urre e C 10 ource C 10 ourc -S 3.0V 3.0V -S rain-to rain-to DI , D DI , D 20µs PULSE WIDTH 20µs PULSE WIDTH T = 25°C J T = 150°C 1 A J 1 A 0.1 1 10 0.1 1 10 DS V , Drain-to-Source Voltage (V) DS V , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 100 100 ) A ( nt (A T = 25°C J urre urrent T = 150°C J rain C T = 150°C ce C J 10 10 our e D T = 25°C J to-S evers n- rai D I , R SD DI , V = 10V DS 20µs PULSE WIDTH V = 0V GS 1 A 1 A 3.0 3.5 4.0 4.5 5.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 GS V , Gate-to-Source Voltage (V) V , Source-to-Drain Voltage (V) SD
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode Forward Voltage www.irf.com 3