Datasheet IRF7389PbF (Infineon) - 5
| Hersteller | Infineon |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 10 / 5 — Fig 9. Fig 10. Fig 11 |
| Dateiformat / Größe | PDF / 265 Kb |
| Dokumentensprache | Englisch |
Fig 9. Fig 10. Fig 11
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N-Channel IRF7389PbF 1200 20 V = 0V, f = 1MHz GS ID = 5.8A C = C + C , C SHORTED iss gs gd ds V = 15V C DS r ss = C gd C oss = C + ds C gd 16 900 Ciss pF) 12 Coss 600 citance ( pa 8 , Ca C 300 Crss 4 GSV , Gate-to-Source Voltage (V) 0 A 0 1 10 100 0 10 20 30 40 Q , Total Gate Charge (nC) DS V , Drain-to-Source Voltage (V) G
Fig 9.
Typical Capacitance Vs.
Fig 10.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 D = 0.50 ) thJA (Z 10 0.20 0.10 0.05 esponse PDM al R 0.02 1 m t1 0.01 t2 Ther Notes: SINGLE PULSE 1. Duty factor D = t / t (THERMAL RESPONSE) 1 2 2. Peak T J =P DM x Z thJA + TA 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5
Fig 9.
Typical Capacitance Vs.
Fig 10.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 D = 0.50 ) thJA (Z 10 0.20 0.10 0.05 esponse PDM al R 0.02 1 m t1 0.01 t2 Ther Notes: SINGLE PULSE 1. Duty factor D = t / t (THERMAL RESPONSE) 1 2 2. Peak T J =P DM x Z thJA + TA 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5