Datasheet IRG4PH50UDPbF (Infineon) - 5
| Hersteller | Infineon |
| Beschreibung | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Seiten / Seite | 11 / 5 — Fig. 7 -. Fig. 8. Fig. 9. Fig. 10 |
| Revision | 01_00 |
| Dateiformat / Größe | PDF / 693 Kb |
| Dokumentensprache | Englisch |
Fig. 7 -. Fig. 8. Fig. 9. Fig. 10
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IRG4PH50UDPbF 7000 20 GE = 0V, f = 1MHz = C + C C SHORTED ies ge gc , ce C = C VCC = 400V I C = 24A V C 6000 res gc C = C + C oes ce gc 16 5000 Cies 12 4000 3000 8 C, Capacitance (pF) 2000 C oes 4 C GE 1000 res V , Gate-to-Emitter Voltage (V) 0 0 1 10 100 0 40 80 120 160 200 V , Collector-to-Emitter Voltage (V) CE Q , Total Gate Charge (nC) G
Fig. 7 -
Typical Capacitance vs.
Fig. 8
- Typical Gate Charge vs. Collector-to-Emitter Voltage Gate-to-Emitter Voltage 5.00 100 V = 480V CC G 5.0Ω V = 15V GE R = Ohm V = 15V GE T = 25 C ° J V = 800V CC 4.60 I = 25A C 24A 4.20 I = A C 48 10 I = A C 24 3.80 I = A C 12 3.40 Total Switching Losses (mJ) Total Switching Losses (mJ) Total Switching Losses ( mJ) 3.00 1 0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 R , Gate Resistance (Ohm) G Ω T , Junction Temperature ( C ) J °
Fig. 9
- Typical Switching Losses vs. Gate
Fig. 10
- Typical Switching Losses vs. Resistance Junction Temperature www.irf.com 5
Fig. 7 -
Typical Capacitance vs.
Fig. 8
- Typical Gate Charge vs. Collector-to-Emitter Voltage Gate-to-Emitter Voltage 5.00 100 V = 480V CC G 5.0Ω V = 15V GE R = Ohm V = 15V GE T = 25 C ° J V = 800V CC 4.60 I = 25A C 24A 4.20 I = A C 48 10 I = A C 24 3.80 I = A C 12 3.40 Total Switching Losses (mJ) Total Switching Losses (mJ) Total Switching Losses ( mJ) 3.00 1 0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 R , Gate Resistance (Ohm) G Ω T , Junction Temperature ( C ) J °
Fig. 9
- Typical Switching Losses vs. Gate
Fig. 10
- Typical Switching Losses vs. Resistance Junction Temperature www.irf.com 5