Datasheet IRG4PH50UDPbF (Infineon) - 4
| Hersteller | Infineon |
| Beschreibung | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Seiten / Seite | 11 / 4 — Fig. 4. Fig. 5. Fig. 6 |
| Revision | 01_00 |
| Dateiformat / Größe | PDF / 693 Kb |
| Dokumentensprache | Englisch |
Fig. 4. Fig. 5. Fig. 6
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRG4PH50UDPbF 50 4.0 V = 15V GE I = A 48 C 80 us PULSE WIDTH 40 3.5 30 I = A 24 C 3.0 20 I = A 12 C 2.5 10 CE Maximum DC Collector Current(A) V , Collector-to-Emitter Voltage(V) 0 2.0 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160 T , Case Temperature ( C) C ° T , Junction Temperature ( C) J °
Fig. 4
- Maximum Collector Current vs. Case
Fig. 5
- Typical Collector-to-Emitter Voltage Temperature vs. Junction Temperature 1 0.50 thJC 0.20 0.1 0.10 0.05 0.02 0.01 DM SINGLE PULSE (THERMAL RESPONSE) 0.01 Thermal Response (Z ) P t1 t 2 Notes: 1. Duty factor D = t / t 1 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
Fig. 4
- Maximum Collector Current vs. Case
Fig. 5
- Typical Collector-to-Emitter Voltage Temperature vs. Junction Temperature 1 0.50 thJC 0.20 0.1 0.10 0.05 0.02 0.01 DM SINGLE PULSE (THERMAL RESPONSE) 0.01 Thermal Response (Z ) P t1 t 2 Notes: 1. Duty factor D = t / t 1 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com