Datasheet BLP2425M10S250P (Ampleon) - 4
| Hersteller | Ampleon |
| Beschreibung | Power LDMOS transistor |
| Seiten / Seite | 11 / 4 — BLP2425M10S250P. Power LDMOS transistor. Fig 1. Definition of transistor … |
| Dateiformat / Größe | PDF / 1.0 Mb |
| Dokumentensprache | Englisch |
BLP2425M10S250P. Power LDMOS transistor. Fig 1. Definition of transistor impedance. 7.3 Test circuit. Fig 2
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BLP2425M10S250P Power LDMOS transistor
drain ZL gate ZS amp01312
Fig 1. Definition of transistor impedance 7.3 Test circuit
90 mm C5 C8 C4 C2 C6 R2 L2 C9 C3 C7 R3 L1 C1 R1 R4 C10 60 mm amp00958 Printed-Circuit Board (PCB): Rogers TC350; thickness = 0.762 mm. See Table 9 for a list of components.
Fig 2. Component layout demo circuit Table 9. List of components
See Figure 2 for component layout.
Component Description Value Remarks
C1, C2 multilayer ceramic chip capacitor 22 pF ATC 800A C3, C6 multilayer ceramic chip capacitor 1000 pF, 50 V C0805 C4, C8 multilayer ceramic chip capacitor 1 F, 50 V C1206 C5, C10 multilayer ceramic chip capacitor 22 pF ATC 800B C7 multilayer ceramic chip capacitor 560 pF ATC 100B C9 electrolytic capacitor 100 F, 63 V L1 ferrite bead inductor 47 , 100 MHz Fair-Rite: 2743019447 L2 inductor 0.05 H Coilcraft: SLC7530D-500MLC R1 chip resistor 100 R0805 R2 chip resistor 10 R0805 R3 chip resistor 1.5 R1206 R4 chip resistor 10 R1206 BLP2425M10S250P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 26 March 2020 4 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
BLP2425M10S250P Power LDMOS transistor
drain ZL gate ZS amp01312
Fig 1. Definition of transistor impedance 7.3 Test circuit
90 mm C5 C8 C4 C2 C6 R2 L2 C9 C3 C7 R3 L1 C1 R1 R4 C10 60 mm amp00958 Printed-Circuit Board (PCB): Rogers TC350; thickness = 0.762 mm. See Table 9 for a list of components.
Fig 2. Component layout demo circuit Table 9. List of components
See Figure 2 for component layout.
Component Description Value Remarks
C1, C2 multilayer ceramic chip capacitor 22 pF ATC 800A C3, C6 multilayer ceramic chip capacitor 1000 pF, 50 V C0805 C4, C8 multilayer ceramic chip capacitor 1 F, 50 V C1206 C5, C10 multilayer ceramic chip capacitor 22 pF ATC 800B C7 multilayer ceramic chip capacitor 560 pF ATC 100B C9 electrolytic capacitor 100 F, 63 V L1 ferrite bead inductor 47 , 100 MHz Fair-Rite: 2743019447 L2 inductor 0.05 H Coilcraft: SLC7530D-500MLC R1 chip resistor 100 R0805 R2 chip resistor 10 R0805 R3 chip resistor 1.5 R1206 R4 chip resistor 10 R1206 BLP2425M10S250P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 26 March 2020 4 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents