Datasheet BLP2425M10S250P (Ampleon)
| Hersteller | Ampleon |
| Beschreibung | Power LDMOS transistor |
| Seiten / Seite | 11 / 1 — BLP2425M10S250P Power LDMOS transistor. Rev. 1 — 26 March 2020. Product … |
| Dateiformat / Größe | PDF / 1.0 Mb |
| Dokumentensprache | Englisch |
BLP2425M10S250P Power LDMOS transistor. Rev. 1 — 26 March 2020. Product data sheet. 1. Product. profile. 1.1 General description
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BLP2425M10S250P Power LDMOS transistor Rev. 1 — 26 March 2020 Product data sheet 1. Product profile 1.1 General description
250 W LDMOS-based power transistor suitable for use in a variety of commercial and consumer cooking, industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz. The BLP2425M10S250P is designed for high-power CW applications and is assembled in a high performance plastic package.
Table 1. Typical performance
RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 C in a class-AB application circuit.
Test signal f V
DS PL(AV) Gp D (MHz) (V) (W) (dB) (%)
CW 2450 32 250 15 66.5 CW pulsed [1] 2450 32 250 15 67.5 [1] tp = 100 s; = 10 %
1.2 Features and benefits
High efficiency Excellent ruggedness Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally input and output matched Thermally enhanced low cost plastic package For RoHS compliance see the product details on the Ampleon website
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency range such as commercial and consumer cooking, industrial, scientific and medical applications Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
BLP2425M10S250P Power LDMOS transistor Rev. 1 — 26 March 2020 Product data sheet 1. Product profile 1.1 General description
250 W LDMOS-based power transistor suitable for use in a variety of commercial and consumer cooking, industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz. The BLP2425M10S250P is designed for high-power CW applications and is assembled in a high performance plastic package.
Table 1. Typical performance
RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 C in a class-AB application circuit.
Test signal f V
DS PL(AV) Gp D (MHz) (V) (W) (dB) (%)
CW 2450 32 250 15 66.5 CW pulsed [1] 2450 32 250 15 67.5 [1] tp = 100 s; = 10 %
1.2 Features and benefits
High efficiency Excellent ruggedness Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally input and output matched Thermally enhanced low cost plastic package For RoHS compliance see the product details on the Ampleon website
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency range such as commercial and consumer cooking, industrial, scientific and medical applications Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents