Datasheet EPC2059 (Efficient Power Conversion) - 2

eGaN® FET DATASHEET
EPC2059
Dynamic Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CISS Input Capacitance# 633 836 CRSS Reverse Transfer Capacitance VDS = 85 V, VGS = 0 V 1.6 COSS Output Capacitance# 267 401 pF COSS(ER) Effective Output Capacitance, Energy Related (Note 2) 332 VDS = 0 to 85 V, VGS = 0 V COSS(TR) Effective Output Capacitance, Time Related (Note 3) 414 RG Gate Resistance 0.5 Ω QG Total Gate Charge# VDS = 85 V, VGS = 5 V, ID = 10 A 5.7 7.4 QGS Gate-to-Source Charge 1.3 QGD Gate-to-Drain Charge VDS = 85 V, ID = 10 A 0.9 nC QG(TH) Gate Charge at Threshold 1.0 QOSS Output Charge# VDS = 85 V, VGS = 0 V 35 53 QRR Source-Drain Recovery Charge 0 # Defined by design. Not subject to production test. Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS. Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
Figure 1: Typical Output Characteristics at 25°C Figure 2: Transfer Characteristics
100 100 25˚C 80 125˚C 80 VDS = 3 V DS 60 60 VGS = 5 V 40 V
– Drain Current (A)
GS = 4 V
– Drain Current (A)
40 V
I D
GS = 3 V
I D
VGS = 2 V 20 20 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS V – Drain-to-Source Voltage (V) GS – Gate-to-Source Voltage (V) Figure 3: RDS(on) vs. VGS for Various Drain Currents Figure 4: RDS(on) vs. VGS for Various Temperatures
25
)
25 ID = 5 A
Ω
ID = 10 A 25˚C I 125˚C 20 D = 15 A 20 I
ance (m
D = 20 A VIDS D = 3 V = 10 A 15
ce Resist ur
15
So to-
10 10
– Drain-to-Source Resistance (mΩ) – Drain-
5 5
R DS(on) R DS(on)
0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)
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