Datasheet EPC2059 (Efficient Power Conversion)
| Hersteller | Efficient Power Conversion |
| Beschreibung | Enhancement Mode Power Transistor |
| Seiten / Seite | 6 / 1 — eGaN® FET DATASHEET. EPC2059 – Enhancement Mode Power Transistor. … |
| Dateiformat / Größe | PDF / 1.3 Mb |
| Dokumentensprache | Englisch |
eGaN® FET DATASHEET. EPC2059 – Enhancement Mode Power Transistor. EFFICIENT POWER CONVERSION. HAL. Maximum Ratings. PARAMETER
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eGaN® FET DATASHEET
EPC2059
EPC2059 – Enhancement Mode Power Transistor
VDS , 170 V
D
R
G EFFICIENT POWER CONVERSION
DS(on) , 9 mΩ ID , 24 A
HAL S
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VALUE UNIT EPC2059 eGaN® FETs are supplied only in
V
passivated die form with solder bars.
DS Drain-to-Source Voltage (Continuous) 170 V Continuous (T
Die Size: 2.8 mm x 1.4 mm
I A = 25°C) 24 D A Pulsed (25°C, TPULSE = 300 µs) 102
Applications
Gate-to-Source Voltage 6 V • DC-DC Converters GS V Gate-to-Source Voltage -4 • Sync rectification for AC/DC & DC-DC TJ Operating Temperature -40 to 150 • USB-C PD Quick Chargers & Adaptors °C TSTG Storage Temperature -40 to 150 • BLDC Motor Drives • Lidar • Class-D Audio
Benefits Thermal Characteristics
• Ultra High Efficiency
PARAMETER TYP UNIT
• No Reverse Recovery RθJC Thermal Resistance, Junction-to-Case 0.9 • Ultra Low QG R °C/W θJB Thermal Resistance, Junction-to-Board 3 • Small Footprint RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 63 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.15 mA 170 V IDSS Drain-Source Leakage VGS = 0 V, VDS = 136 V 0.03 0.1 Gate-to-Source Forward Leakage VGS = 5 V 0.01 2.4 mA IGSS Gate-to-Source Forward Leakage# VGS = 5 V, TJ = 125°C 0.13 5.5 Gate-to-Source Reverse Leakage VGS = -4 V 0.03 0.2 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 3 mA 0.7 1 2.5 V RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 10 A 6.8 9 mΩ VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V 1.6 V # Defined by design. Not subject to production test. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 1
EPC2059
EPC2059 – Enhancement Mode Power Transistor
VDS , 170 V
D
R
G EFFICIENT POWER CONVERSION
DS(on) , 9 mΩ ID , 24 A
HAL S
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VALUE UNIT EPC2059 eGaN® FETs are supplied only in
V
passivated die form with solder bars.
DS Drain-to-Source Voltage (Continuous) 170 V Continuous (T
Die Size: 2.8 mm x 1.4 mm
I A = 25°C) 24 D A Pulsed (25°C, TPULSE = 300 µs) 102
Applications
Gate-to-Source Voltage 6 V • DC-DC Converters GS V Gate-to-Source Voltage -4 • Sync rectification for AC/DC & DC-DC TJ Operating Temperature -40 to 150 • USB-C PD Quick Chargers & Adaptors °C TSTG Storage Temperature -40 to 150 • BLDC Motor Drives • Lidar • Class-D Audio
Benefits Thermal Characteristics
• Ultra High Efficiency
PARAMETER TYP UNIT
• No Reverse Recovery RθJC Thermal Resistance, Junction-to-Case 0.9 • Ultra Low QG R °C/W θJB Thermal Resistance, Junction-to-Board 3 • Small Footprint RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 63 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.15 mA 170 V IDSS Drain-Source Leakage VGS = 0 V, VDS = 136 V 0.03 0.1 Gate-to-Source Forward Leakage VGS = 5 V 0.01 2.4 mA IGSS Gate-to-Source Forward Leakage# VGS = 5 V, TJ = 125°C 0.13 5.5 Gate-to-Source Reverse Leakage VGS = -4 V 0.03 0.2 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 3 mA 0.7 1 2.5 V RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 10 A 6.8 9 mΩ VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V 1.6 V # Defined by design. Not subject to production test. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 1