Datasheet AOTL125A60 (Alpha & Omega) - 2

AOTL125A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS
I =250μA, V D GS=0V, TJ=25° C 600 BVDSS Drain-Source Breakdown Voltage V I =250μA, V D GS=0V, TJ=150° C 700 BVDSS Breakdown Voltage Temperature I =250μA, V D GS=0V 0.51 /∆TJ V/ oC Coefficient VDS=600V, VGS=0V 1 I m DSS Zero Gate Voltage Drain Current A VDS=480V, TJ=125°C 10 I Gate-Body leakage current V GSS DS=0V, VGS=±20V ±100 nA V V GS(th) Gate Threshold Voltage DS=5V, ID=250mA 3.9 V R Static Drain-Source On-Resistance V DS(ON) GS=10V, ID=14A 0.111 0.125 Ω g Forward Transconductance V FS DS=10V, ID=14A 21 S V I SD Diode Forward Voltage S=14A,VGS=0V 0.86 1.2 V IS Maximum Body-Diode Continuous Current 28 A ISM Maximum Body-Diode Pulsed Current C 100 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2993 pF VGS=0V, VDS=100V, f=1MHz Coss Output Capacitance 85 pF Effective output capacitance, energy Co(er) 73 pF related H VGS=0V, VDS=0 to 480V, f=1MHz Effective output capacitance, time Co(tr) 305 pF related I C Reverse Transfer Capacitance V rss GS=0V, VDS=100V, f=1MHz 0.8 pF Rg Gate resistance f=1MHz 2.3 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 39 nC Q Gate Source Charge V gs GS=10V, VDS=480V, ID=14A 19 nC Qgd Gate Drain Charge 9 nC tD(on) Turn-On DelayTime 39 ns t Turn-On Rise Time V r GS=10V, VDS=400V, ID=14A, 34 ns t R D(off) Turn-Off DelayTime G=5W 56 ns tf Turn-Off Fall Time 19 ns trr Body Diode Reverse Recovery Time 375 ns Irm Peak Reverse Recovery Current IF=14A, dI/dt=100A/ms, VDS=400V 34 A Qrr Body Diode Reverse Recovery Charge 8 mC A. The value of R q is measured with the device in a still air environment with T =25°C. JA A B. The power dissipation P is based on T =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation D J(MAX) limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150°C, Ratings are based on low frequency and duty cycles to keep initial T J(MAX) J =25°C. D. The R q is the sum of the thermal impedance from junction to case R and case to ambient. JA qJC E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) G. L=60mH, I =4.3A, R =25Ω, Starting T =25°C. AS G J H. C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS (BR)DSS. I. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V o(tr) oss DS (BR)DSS. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS. AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale Rev.1.0: November 2020
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