Datasheet AOTL125A60 (Alpha & Omega)
| Hersteller | Alpha & Omega |
| Beschreibung | 600V, aMOS5 TOLL for high density, high reliability SMPS |
| Seiten / Seite | 6 / 1 — AOTL125A60. 600V,. MOS5 TM TOLL for high density, high reliability SMPS. … |
| Dateiformat / Größe | PDF / 436 Kb |
| Dokumentensprache | Englisch |
AOTL125A60. 600V,. MOS5 TM TOLL for high density, high reliability SMPS. General Description. Product Summary. Applications
Modelllinie für dieses Datenblatt
Textversion des Dokuments
AOTL125A60 600V,
a
MOS5 TM TOLL for high density, high reliability SMPS General Description Product Summary
• Proprietary aMOS5TM technology VDS @ Tj,max 700V • Low RDS(ON) IDM 100A • Optimized switching parameters for better EMI R < 0.125Ω DS(ON),max performance Qg,typ 39nC • Enhanced body diode for robustness and fast reverse recovery Eoss @ 400V 6.3mJ
Applications
100% UIS Tested 100% Rg Tested • PFC and PWM stages (LLC, FSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters
Top View
D
TOLL
D G PIN1(G) S K S K PIN1(G)
Orderable Part Number Package Type Form Minimum Order Quantity
AOTL125A60 TOLL Tape & Reel 2000
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units
Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±20 V Gate-Source Voltage (dynamic) AC( f>1Hz) VGS ±30 V Continuous Drain TC=25°C 28 ID Current TC=100°C 18 A Pulsed Drain Current C IDM 100 Continuous Drain TA=25°C 5.2 IDSM A Current TA=70°C 4.2 Avalanche Current C L=1mH IAR 14.0 A Repetitive avalanche energy C EAR 98 mJ Single pulsed avalanche energy G EAS 555 mJ MOSFET dv/dt ruggedness dv/dt 100 V/ns Diode reverse recovery dv/dt 20 V/ns VDS=0 to 400V,IF<=26A,Tj=25°C di/dt 400 A/us TC=25°C 312 W P Power Dissipation B D Derate above 25°C 2.5 W/°C TA=25°C 8.3 PDSM W Power Dissipation A TA=70°C 5.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C
Thermal Characteristics Parameter Symbol Typical Maximum Units
Maximum Junction-to-Ambient A t ≤ 10s 10 15 °C/W RqJA Maximum Junction-to-Ambient A,D Steady-State 40 50 °C/W Maximum Junction-to-Case RqJC 0.3 0.4 °C/W Rev.1.0: November 2020
www.aosmd.com
Page 1 of 6
a
MOS5 TM TOLL for high density, high reliability SMPS General Description Product Summary
• Proprietary aMOS5TM technology VDS @ Tj,max 700V • Low RDS(ON) IDM 100A • Optimized switching parameters for better EMI R < 0.125Ω DS(ON),max performance Qg,typ 39nC • Enhanced body diode for robustness and fast reverse recovery Eoss @ 400V 6.3mJ
Applications
100% UIS Tested 100% Rg Tested • PFC and PWM stages (LLC, FSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters
Top View
D
TOLL
D G PIN1(G) S K S K PIN1(G)
Orderable Part Number Package Type Form Minimum Order Quantity
AOTL125A60 TOLL Tape & Reel 2000
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units
Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±20 V Gate-Source Voltage (dynamic) AC( f>1Hz) VGS ±30 V Continuous Drain TC=25°C 28 ID Current TC=100°C 18 A Pulsed Drain Current C IDM 100 Continuous Drain TA=25°C 5.2 IDSM A Current TA=70°C 4.2 Avalanche Current C L=1mH IAR 14.0 A Repetitive avalanche energy C EAR 98 mJ Single pulsed avalanche energy G EAS 555 mJ MOSFET dv/dt ruggedness dv/dt 100 V/ns Diode reverse recovery dv/dt 20 V/ns VDS=0 to 400V,IF<=26A,Tj=25°C di/dt 400 A/us TC=25°C 312 W P Power Dissipation B D Derate above 25°C 2.5 W/°C TA=25°C 8.3 PDSM W Power Dissipation A TA=70°C 5.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C
Thermal Characteristics Parameter Symbol Typical Maximum Units
Maximum Junction-to-Ambient A t ≤ 10s 10 15 °C/W RqJA Maximum Junction-to-Ambient A,D Steady-State 40 50 °C/W Maximum Junction-to-Case RqJC 0.3 0.4 °C/W Rev.1.0: November 2020
www.aosmd.com
Page 1 of 6