Datasheet 2SJ168 (Toshiba) - 2

2SJ168
Electrical Characteristics (Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 ⎯ ⎯ ±100 nA Drain cut-off current IDSS VDS = −60 V, VGS = 0 ⎯ ⎯ −10 μA Drain-source breakdown voltage V (BR) DSS ID = −1 mA, VGS = 0 −60 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −2 ⎯ −3.5 V Forward transfer admittance ⏐Yfs⏐ VDS = −10 V, ID = −50 mA 100 ⎯ ⎯ mS Drain-source ON resistance RDS (ON) ID = −50 mA, VGS = −10 V ⎯ 1.3 2.0 Ω Drain-source ON voltage VDS (ON) ID = −50 mA, VGS = −10 V ⎯ −65 −100 mV Input capacitance Ciss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 73 85 pF Reverse transfer capacitance Crss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 15 22 pF Output capacitance Coss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 48 60 pF Rise time tr ⎯ 8 ⎯ Turn-on time ton ⎯ 14 ⎯ Switching time ns Fall time tf ⎯ 35 ⎯ VIN: tr, tf < 5 ns Turn-off Time toff ⎯ 100 D.U. ≤ 1% (Zout = 50 Ω) 2 2014-03-01 Document Outline TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Absolute Maximum Ratings (Ta  25°C) Marking Electrical Characteristics (Ta  25°C) RESTRICTIONS ON PRODUCT USE