Datasheet 2SJ168 (Toshiba) - 4

HerstellerToshiba
BeschreibungField Effect Transistor Silicon P Channel MOS
Seiten / Seite5 / 4 — 2SJ168. 4. 2014-03-01. Document. Outline. TOSHIBA. Field. Effect. …
Dateiformat / GrößePDF / 325 Kb
DokumentenspracheEnglisch

2SJ168. 4. 2014-03-01. Document. Outline. TOSHIBA. Field. Effect. Transistor. Silicon. P. Channel. MOS. Type. Absolute. Maximum. Ratings. (Ta. . 25°C)

2SJ168 4 2014-03-01 Document Outline TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Absolute Maximum Ratings (Ta  25°C)

Modelllinie für dieses Datenblatt

Textversion des Dokuments

2SJ168 4 2014-03-01 Document Outline TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Absolute Maximum Ratings (Ta  25°C) Marking Electrical Characteristics (Ta  25°C) RESTRICTIONS ON PRODUCT USE