Datasheet FDN304P (ON Semiconductor) - 2

F DN30
January 2001
4 P FDN304P P-Channel 1.8V Specified PowerTrench

MOSFET General Description Features
This P-Channel 1.8V specified MOSFET uses • –2.4 A, –20 V. RDS(ON) = 52 mΩ @ VGS = –4.5 V Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management RDS(ON) = 70 mΩ @ VGS = –2.5 V applications. RDS(ON) = 100 mΩ @ VGS = –1.8 V
Applications
• Fast switching speed • Battery management • High performance trench technology for extremely • low R Load switch DS(ON) • Battery protection • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
D
D
S
G S
TM G SuperSOT -3 Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current – Continuous (Note 1a) –2.4 A – Pulsed –10 PD Maximum Power Dissipation (Note 1a) 0.5 W (Note 1b) 0.46 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity
304P FDN304P 7’’ 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDN304P Rev C(W)