Datasheet FDN304P (ON Semiconductor) - 4

F DN30 Typical Characteristics 4 P
15 4 V = -4.5V GS -2.5V -3.0V 3.5
)
12
A
-2.0V VGS = -1.5V 3
NT (
9 2.5 -1.8V -1.8V 2 6 -2.0V 1.5
, DRAIN CURRE
-2.5V
D-I
-3.0V 3 -1.5V 1 -4.5V 0.5 0 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5
-V -ID, DRAIN CURRENT (A) DS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.5 0.14 I ID = -1.2 A D = -2.4A 1.4 VGS = -4.5V 0.12 1.3 0.1 1.2 1.1 0.08 1 TA = 125oC 0.06 0.9 TA = 25oC 0.8 0.04 0.7 0.02 -50 -25 0 25 50 75 100 125 150 1 2 3 4 5
o TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage.
15 100 V V DS = - 5V T GS = 0V A = 25oC 10 12 -55oC 1 TA = 125oC 9 0.1 25oC 6 -55oC 0.01 3 0.001 0.0001 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 0.5 1 1.5 2 2.5 3
-V -V SD, BODY DIODE FORWARD VOLTAGE (V) GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDN304P Rev C(W)