Preliminary Datasheet MB85RS4MTY (Fujitsu)
| Hersteller | Fujitsu |
| Beschreibung | Memory FRAM 4M (512 K х 8) Bit SPI |
| Seiten / Seite | 39 / 1 — FUJITSU SEMICONDUCTOR. MEMORY SOLUTION DATA SHEET. DS501-00065-0v1-E. 4M … |
| Dateiformat / Größe | PDF / 2.6 Mb |
| Dokumentensprache | Englisch |
FUJITSU SEMICONDUCTOR. MEMORY SOLUTION DATA SHEET. DS501-00065-0v1-E. 4M (512 K. 8) Bit SPI. MB85RS4MTY. DESCRIPTION. FEATURES
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FUJITSU SEMICONDUCTOR MEMORY SOLUTION DATA SHEET DS501-00065-0v1-E
Memory FRAM
4M (512 K
8) Bit SPI MB85RS4MTY DESCRIPTION
MB85RS4MTY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is targeted for high-temperature environment applications. MB85RS4MTY adopts the Serial Peripheral Interface (SPI). The MB85RS4MTY is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS4MTY can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. As MB85RS4MTY does not need any waiting time in writing process, the write cycle time of MB85RS4MTY is much shorter than that of Flash memories or E2PROM.
FEATURES
• Bit configuration : 524,288 words 8 bits • Serial Sector Region : 256 words 8 bits In this region, data storage after (by) three times reflow based on JEDEC MSL-3 standard condition is guaranteed. • Unique ID • Serial Number : 64 bits In this region, data storage after (by) three times reflow based on JEDEC MSL-3 standard condition is guaranteed. • Serial Peripheral Interface : SPI (Serial Peripheral Interfaces) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1) • Operating frequency : 50 MHz (Max) • High endurance : 1013 times / byte • Data retention : 10 years (+85 C) 2 .75years (+105 C) 0.85 years (+125 C) or more Under evaluation for more than 2.5years(+125 C) • Operating power supply voltage : 1.8 V to 3.6 V • Low power consumption : Operating power supply current 4 mA (Max@50 MHz) Standby current 350 A (Max) Deep Power Down current 30 A (Max) Hibernate current 14 A (Max) • Operation ambient temperature range : 40 C to +125 C • Package : 8-pin plastic SOP 208mil 8-pin plastic DFN 5mm 6mm RoHS compliant Copyright 2020 FUJITSU SEMICONDUCTOR MEMORY SOLUTION LIMITED 2020.06 Document Outline DESCRIPTION FEATURES PIN ASSIGNMENT PIN FUNCTIONAL DESCRIPTIONS BLOCK DIAGRAM SPI MODE SERIAL PERIPHERAL INTERFACE (SPI) STATUS REGISTER OP-CODE COMMAND BLOCK PROTECT WRITING PROTECT ABSOLUTE MAXIMUM RATINGS RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS 1. DC Characteristics 2. AC Characteristics 3. Pin Capacitance TIMING DIAGRAM POWER ON/OFF SEQUENCE FRAM CHARACTERISTICS NOTE ON USE ESD AND LATCH-UP REFLOW CONDITIONS AND FLOOR LIFE Current status on Contained Restricted Substances ORDERING INFORMATION PACKAGE DIMENSION MARKING (Example) PACKING INFORMATION 1. Tube 2. Emboss Tape
Memory FRAM
4M (512 K
8) Bit SPI MB85RS4MTY DESCRIPTION
MB85RS4MTY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is targeted for high-temperature environment applications. MB85RS4MTY adopts the Serial Peripheral Interface (SPI). The MB85RS4MTY is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS4MTY can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. As MB85RS4MTY does not need any waiting time in writing process, the write cycle time of MB85RS4MTY is much shorter than that of Flash memories or E2PROM.
FEATURES
• Bit configuration : 524,288 words 8 bits • Serial Sector Region : 256 words 8 bits In this region, data storage after (by) three times reflow based on JEDEC MSL-3 standard condition is guaranteed. • Unique ID • Serial Number : 64 bits In this region, data storage after (by) three times reflow based on JEDEC MSL-3 standard condition is guaranteed. • Serial Peripheral Interface : SPI (Serial Peripheral Interfaces) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1) • Operating frequency : 50 MHz (Max) • High endurance : 1013 times / byte • Data retention : 10 years (+85 C) 2 .75years (+105 C) 0.85 years (+125 C) or more Under evaluation for more than 2.5years(+125 C) • Operating power supply voltage : 1.8 V to 3.6 V • Low power consumption : Operating power supply current 4 mA (Max@50 MHz) Standby current 350 A (Max) Deep Power Down current 30 A (Max) Hibernate current 14 A (Max) • Operation ambient temperature range : 40 C to +125 C • Package : 8-pin plastic SOP 208mil 8-pin plastic DFN 5mm 6mm RoHS compliant Copyright 2020 FUJITSU SEMICONDUCTOR MEMORY SOLUTION LIMITED 2020.06 Document Outline DESCRIPTION FEATURES PIN ASSIGNMENT PIN FUNCTIONAL DESCRIPTIONS BLOCK DIAGRAM SPI MODE SERIAL PERIPHERAL INTERFACE (SPI) STATUS REGISTER OP-CODE COMMAND BLOCK PROTECT WRITING PROTECT ABSOLUTE MAXIMUM RATINGS RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS 1. DC Characteristics 2. AC Characteristics 3. Pin Capacitance TIMING DIAGRAM POWER ON/OFF SEQUENCE FRAM CHARACTERISTICS NOTE ON USE ESD AND LATCH-UP REFLOW CONDITIONS AND FLOOR LIFE Current status on Contained Restricted Substances ORDERING INFORMATION PACKAGE DIMENSION MARKING (Example) PACKING INFORMATION 1. Tube 2. Emboss Tape