SiZF300DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 100 10000 V = 10 V thru 4 V GS 80 80 ) 1000 1000 60 V = 3 V GS 60 rrent (A ne ne rrent (A ine u ne ne ine u C C n 1st li n 2nd l 1st li 40 2nd li 2nd li 2nd l rai 40 rai T = 25 °C D 100 D C 100 - - I D I D 20 20 T = 125 °C C T = -55 °C C 0 10 0 10 0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS 2nd line 2nd line Output CharacteristicsTransfer Characteristics Axis Title Axis Title 0.003 10000 5000 10000 0.0025 ) Ω V = 4.5 V GS 4000 ) F Ciss 0.002 1000 p 1000 3000 ce ( ne ne ne ine ne ine 0.0015 itan c n-Resistance ( 1st li 2nd li a 2nd l 1st li 2nd li 2nd l O V = 10 V 2000 GS C - 0.001 100 Cap oss 100 - (on) C S D 1000 R 0.0005 Crss 0 10 0 10 0 20 40 60 80 100 0 5 10 15 20 25 30 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS 2nd line 2nd line On-Resistance vs. Drain CurrentCapacitance Axis Title Axis Title 10 10000 2.0 10000 ) I = 7 A I = 10 A d) D D e 1.8 (V V = 15 V DS 8 liz a 1.6 V = 10 V GS ltage o 1000 1000 6 1.4 V = 7.5 V DS ne ne ne ine ne ine 1.2 ource V 1st li V = 4.5 V GS 1st li 2nd l 4 2nd li 2nd li 2nd l V = 24 V 1.0 DS 100 Resistance (Norm 100 ate-to-S n- G O 0.8 - 2 - )n GS 0.6 V DS(oR 0 10 0.4 10 0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J 2nd line 2nd line Gate ChargeOn-Resistance vs. Junction Temperature S18-0479-Rev. A, 30-Apr-2018 8 Document Number: 76288 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000