Datasheet SiZF300DT (Vishay) - 7

HerstellerVishay
BeschreibungDual N-Channel 30 V (D-S) MOSFET with Schottky Diode
Seiten / Seite13 / 7 — SiZF300DT. CHANNEL-1 TYPICAL CHARACTERISTICS. Normalized Thermal …
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SiZF300DT. CHANNEL-1 TYPICAL CHARACTERISTICS. Normalized Thermal Transient Impedance, Junction-to-Ambient

SiZF300DT CHANNEL-1 TYPICAL CHARACTERISTICS Normalized Thermal Transient Impedance, Junction-to-Ambient

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SiZF300DT
www.vishay.com Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title 1 10000 Duty Cycle = 0.5 ent 0.2 ransi Notes: 1000 T e v 0.1 pedance P ne ne DM 0.1 m ffecti l I 0.05 1st li a t 2nd li 1 ed E t2 t 100 z erm h 0.02 1. Duty cycle, D = 1 ali T t2 2. Per unit base = R = 66 °C/W thJA (t) Norm 3. T - T = P Z Single pulse JM A DM thJA 4. Surface mounted 0.01 10 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) 2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title 1 10000 Duty Cycle = 0.5 ent ransi 1000 T e 0.2 v pedance ne ne m 0.1 ffecti l I 0.05 1st li a 2nd li ed E 0.02, Single pulse 100 z herm ali T Norm 0.1 10 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
S18-0479-Rev. A, 30-Apr-2018
7
Document Number: 76288 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000