Datasheet LTC4362-1, LTC4362-2 (Analog Devices) - 3

LTC4362-1/LTC4362-2
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = 5V, VON = 0V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Supplies
VIN Input Voltage Range l 2.5 28 V VIN(UVL) Input Undervoltage Lockout VIN Rising l 1.8 2.1 2.45 V IIN Input Supply Current VON = 0V l 220 400 µA VON = 2.5V l 1.5 10 µA
Thresholds
VIN(OV) IN Pin Overvoltage Threshold VIN Rising l 5.684 5.8 5.916 V VIN(OVL) IN Pin Overvoltage Recovery Threshold VIN Falling l 5.51 5.7 5.85 V ∆VOV Overvoltage Hysteresis l 25 100 300 mV
Input Pins
VON(TH) ON Input Threshold l 0.4 1.5 V ION ON Pull-Down Current VON = 2.5V l 2.5 5 10 µA
Output Pins
VOUT(UP) OUT Turn-On Ramp-Rate VOUT = 0.5V to 4V l 1.5 3 4.5 V/ms IOUT OUT Leakage Current VON = 2.5V, VOUT = 5V l 0 ±3 µA VGATEP(CLP) IN to GATEP Clamp Voltage VIN = 8V to 28V l 5 5.8 7.5 V RGATEP GATEP Pull-Down Resistance VGATEP = 3V l 0.8 2 3.2 MΩ VPWRGD(OL) PWRGD Output Low Voltage VIN = 5V, IPWRGD = 3mA l 0.23 0.4 V RPWRGD PWRGD Pull-Up Resistance to OUT VIN = 6.5V, VPWRGD = 1V l 250 500 800 kΩ
Internal N-Channel MOSFET
RON On Resistance IOUT = 0.5A l 40 70 mΩ ITRIP Overcurrent Threshold l 1.2 1.5 1.8 A IAS Peak Avalanche Current L = 0.1mH (Note 5) 10 A EAS Single Pulse Avalanche Energy IAS = 10A, L = 0.1mH (Note 5) 10 mJ
Delay
tON Turn-On Delay VIN High to VOUT = 0.5V, ROUT = 1kΩ l 50 130 200 ms tOFF(OV) Turn-Off Delay for Overvoltage VIN = 5V 6.5V to VOUT = 4.5V, ROUT = 1kΩ l 0.45 1 µs tOFF(OC) Turn-Off Delay for Overcurrent IOUT = 0.5A 3A to VOUT = 4.5V l 5 10 20 µs tPWRGD(LH) PWRGD Rising Delay VIN = 5V 6.5V to PWRGD High l 0.3 1 µs tPWRGD(HL) PWRGD Falling Delay VIN = 0V 5V, VOUT = 0.5V to PWRGD Low, l 25 65 100 ms ROUT = 1kΩ tON(OFF) ON High to N-channel MOSFET Off VON = 0V 2.5V l 40 100 µs
ESD Protection
ESD Protection for IN to GND COUT = 1µF, Human Body Model ±25 kV
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 3:
The minimum drain-source breakdown voltage of the internal may cause permanent damage to the device. Exposure to any Absolute MOSFET is 28V. Driving the IN and SENSE pins more than 28V above OUT Maximum Rating condition for extended periods may affect device may damage the device if the EAS capability of the MOSFET is exceeded. reliability and lifetime.
Note 4:
An internal current sense resistor ties IN and SENSE. Driving
Note 2:
All currents into device pins are positive; all currents out of device SENSE relative to IN may damage the resistor. pins are negative. All voltages are referenced to GND unless otherwise
Note 5:
The IAS and EAS typical values are based on characterization and specified. are not production tested. Rev. B For more information www.analog.com 3 Document Outline Features Applications Typical Application Description Absolute Maximum Ratings order information Pin Configuration Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Package Description Revision History Typical Application Related Parts