Datasheet IRF9Z24N (International Rectifier) - 2
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 9 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| Dateiformat / Größe | PDF / 117 Kb |
| Dokumentensprache | Englisch |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
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IRF9Z24N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.175 Ω VGS = -10V, ID = -7.2A VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 2.5 ––– ––– S VDS = -25V, ID = -7.2A ––– ––– -25 V IDSS Drain-to-Source Leakage Current µA DS = -55V, VGS = 0V ––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 19 ID = -7.2A Qgs Gate-to-Source Charge ––– ––– 5.1 nC VDS = -44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 10 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 13 ––– VDD = -28V tr Rise Time ––– 55 ––– ID = -7.2A ns td(off) Turn-Off Delay Time ––– 23 ––– RG = 24Ω tf Fall Time ––– 37 ––– RD = 3.7Ω, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 350 ––– VGS = 0V Coss Output Capacitance ––– 170 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 92 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
I D S Continuous Source Current MOSFET symbol ––– ––– -12 (Body Diode) showing the A ISM Pulsed Source Current integral reverse G -48 (Body Diode) ––– ––– p-n junction diode. S VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -7.2A, VGS = 0V trr Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = -7.2A Qrr Reverse RecoveryCharge ––– 84 130 µC di/dt = -100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by I ≤ ≤ SD -7.2A, di/dt ≤ -280A/µs, VDD V(BR)DSS, max. junction temperature. ( See fig. 11 ) T ≤ J 175°C Starting TJ = 25°C, L = 3.7mH Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = -7.2A. (See Figure 12)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.175 Ω VGS = -10V, ID = -7.2A VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 2.5 ––– ––– S VDS = -25V, ID = -7.2A ––– ––– -25 V IDSS Drain-to-Source Leakage Current µA DS = -55V, VGS = 0V ––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 19 ID = -7.2A Qgs Gate-to-Source Charge ––– ––– 5.1 nC VDS = -44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 10 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 13 ––– VDD = -28V tr Rise Time ––– 55 ––– ID = -7.2A ns td(off) Turn-Off Delay Time ––– 23 ––– RG = 24Ω tf Fall Time ––– 37 ––– RD = 3.7Ω, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 350 ––– VGS = 0V Coss Output Capacitance ––– 170 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 92 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
I D S Continuous Source Current MOSFET symbol ––– ––– -12 (Body Diode) showing the A ISM Pulsed Source Current integral reverse G -48 (Body Diode) ––– ––– p-n junction diode. S VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -7.2A, VGS = 0V trr Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = -7.2A Qrr Reverse RecoveryCharge ––– 84 130 µC di/dt = -100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by I ≤ ≤ SD -7.2A, di/dt ≤ -280A/µs, VDD V(BR)DSS, max. junction temperature. ( See fig. 11 ) T ≤ J 175°C Starting TJ = 25°C, L = 3.7mH Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = -7.2A. (See Figure 12)