Datasheet IRF9Z24N (International Rectifier) - 4
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 9 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Dateiformat / Größe | PDF / 117 Kb |
| Dokumentensprache | Englisch |
Fig 5. Fig 6. Fig 7. Fig 8
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IRF9Z24N 700 20 I = -7.2 A V G S = 0V , f = 1M H z D C is = s C gs + C g d , C ds S H OR TE D ) 600 C rs = s C g d V V = -4 4V DS C o = s s C ds + C gd 16 V = -2 8V DS ) 500 ltage ( F C is s o p V e ( e 12 c 400 C o s s itanc our -S pac 300 a -to 8 te , C a C 200 C rs s , G GS 4 100 -V FO R TEST C IR C U IT SEE F IGU R E 1 3 0 0 A A 1 10 100 0 5 10 15 20 25 V , Drai n-to -So urce V oltag e (V) Q D S G , Tota l Gate Ch arge (n C)
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1 0 0 100 O PER ATIO N IN TH IS AR EA LIM ITED ) BY RD S(o n) t (A n 1 0µs rre ) u T = 1 50°C J A 1 0 C t ( in n ra rre D T = 25 °C u J e C 10 100µ s rs in e v ra e 1 R , D , D -I SD -I 1m s T = 2 5°C C T = 1 75°C J V G S = 0 V Sin gle Pu ls e 10m s 0 . 1 A 1 A 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8 1 10 100 - S V D , S ou rce -to -Drain V olta ge (V ) -V , Dra in-to-So urce V olta ge (V ) D S
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1 0 0 100 O PER ATIO N IN TH IS AR EA LIM ITED ) BY RD S(o n) t (A n 1 0µs rre ) u T = 1 50°C J A 1 0 C t ( in n ra rre D T = 25 °C u J e C 10 100µ s rs in e v ra e 1 R , D , D -I SD -I 1m s T = 2 5°C C T = 1 75°C J V G S = 0 V Sin gle Pu ls e 10m s 0 . 1 A 1 A 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8 1 10 100 - S V D , S ou rce -to -Drain V olta ge (V ) -V , Dra in-to-So urce V olta ge (V ) D S
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage